FDMS7694 Fairchild Semiconductor, FDMS7694 Datasheet

MOSFET N-CH 30V POWER56

FDMS7694

Manufacturer Part Number
FDMS7694
Description
MOSFET N-CH 30V POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMS7694

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9.5 mOhm @ 13.2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
13.2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
1410pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
*
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
11.1 mOhms
Forward Transconductance Gfs (max / Min)
55 S
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
44 A
Power Dissipation
27 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
7 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMS7694TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS7694
Manufacturer:
FAIRCHILD
Quantity:
2 130
Part Number:
FDMS7694
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDMS7694
Quantity:
430
©2010 Fairchild Semiconductor Corporation
FDMS7694 Rev.C1
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMS7694
N-Channel PowerTrench
30 V, 9.5 mΩ
Features
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJC
θJA
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
Next
engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
, T
Symbol
Device Marking
STG
FDMS7694
DS(on)
DS(on)
generation
= 9.5 mΩ at V
= 14.5 mΩ at V
Top
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
enhanced
GS
GS
= 10 V, I
FDMS7694
-Continuous
-Continuous (Silicon limited)
-Pulsed
= 4.5 V, I
Device
Power 56
body
D
= 13.2 A
D
diode
= 11 A
T
®
A
D
= 25 °C unless otherwise noted
MOSFET
D
Parameter
technology,
D
D
Bottom
Power 56
DS(on)
Package
1
S
T
T
T
T
T
S
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r
diode reverse recovery performance.
Applications
C
C
C
A
A
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
S
IMVP Vcore Switching for Notebook
VRM Vcore Switching for Desktop and server
OringFET / Load Switching
DC-DC Conversion
Pin 1
G
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
(Note 4)
D
D
D
D
8
5
6
7
DS(on)
Tape Width
, fast switching speed ang body
12 mm
-55 to +150
Ratings
13.2
±20
4.5
2.5
50
30
20
44
50
21
27
www.fairchildsemi.com
August 2010
3000 units
Quantity
4
3
2
1
G
S
S
S
Units
°C/W
mJ
°C
W
V
V
A

Related parts for FDMS7694

FDMS7694 Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMS7694 FDMS7694 ©2010 Fairchild Semiconductor Corporation FDMS7694 Rev.C1 ® MOSFET General Description = 13.2 A This N-Channel MOSFET has been designed specifically improve the overall efficiency and to minimize switch node ...

Page 2

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 3. Starting N-ch 0.3 mH 4.As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. FDMS7694 Rev. °C unless otherwise noted J Test Conditions = 250 μ 250 μ ...

Page 3

... JUNCTION TEMPERATURE ( , T J Figure 3. Normalized On Resistance vs Junction Temperature 50 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDMS7694 Rev. °C unless otherwise noted 3 μ 100 125 150 - 3 ...

Page 4

... Switching Capability 100 10 1 THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE 0 MAX RATED 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDMS7694 Rev. °C unless otherwise noted J 2000 1000 100 100 100 500 100 100us ...

Page 5

... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 13. FDMS7694 Rev. °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK θJA θ ...

Page 6

... Dimensional Outline and Pad Layout FDMS7694 Rev.C1 6 www.fairchildsemi.com ...

Page 7

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDMS7694 Rev.C1 F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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