FDMA507PZ Fairchild Semiconductor, FDMA507PZ Datasheet - Page 5

• Manufacturer Part Number: FDMA507PZ
• Description: MOSFET P-CH 20V 6-MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMA507PZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 7.8A, 5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 5V
• Input Capacitance (ciss) @ Vds: 2015pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 45 mOhms
• Forward Transconductance Gfs (max / Min): 33 S
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 7.8 A
• Power Dissipation: 2.4 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 30 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMA507PZTR

©2010 Fairchild Semiconductor Corporation
FDMA507PZ Rev.C
Typical Characteristics
0.001
0.01
0.1
2
1
10
-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
0.2
0.1
0.05
0.02
0.01
10
-3
SINGLE PULSE
R
θ
JA
T
J
= 145
= 25 °C unless otherwise noted
o
10
C/W
-2
t, RECTANGULAR PULSE DURATION (sec)
10
-1
5
1
NOTES:
DUTY FACTOR: D = t
PEAK T
10
J
= P
DM
x Z
P
θJA
DM
1
/t
x R
2
100
θJA
t
1
+ T
t
2
A
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