FDMA507PZ Fairchild Semiconductor, FDMA507PZ Datasheet - Page 4

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FDMA507PZ

Manufacturer Part Number
FDMA507PZ
Description
MOSFET P-CH 20V 6-MICROFET
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMA507PZ

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 7.8A, 5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
7.8A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
42nC @ 5V
Input Capacitance (ciss) @ Vds
2015pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
*
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
45 mOhms
Forward Transconductance Gfs (max / Min)
33 S
Drain-source Breakdown Voltage
- 20 V
Continuous Drain Current
- 7.8 A
Power Dissipation
2.4 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
30 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMA507PZTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMA507PZ
Manufacturer:
ST
0
Part Number:
FDMA507PZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2010 Fairchild Semiconductor Corporation
FDMA507PZ Rev.C
Typical Characteristics
Figure 9.
10
10
10
10
10
10
10
10
10
10
5
4
3
2
1
0
1000
Figure 7.
-10
100
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
0.5
10
0
10
1
I
D
-4
= -7.8 V
V
GS
= 0 V
Gate Leakage Current vs Gate to
-V
Gate Charge Characteristics
3
10
GS ,
Q
Source Voltage
V
g
GATE TO SOURCE VOLTAGE (V)
DD
, GATE CHARGE(nC)
T
T
10
= -8 V
J
J
V
= 125
= 25
-3
DD
6
= -12 V
20
Figure 11. Single Pulse Maximum Power Dissipation
o
o
C
V
C
DD
T
= -10 V
J
9
= 25 °C unless otherwise noted
10
30
-2
12
t, PULSE WIDTH (sec)
40
15
10
-1
4
0.01
0.1
10000
50
10
1000
1
1
0.1
100
0.1
THIS AREA IS
LIMITEDBY r
SINGLE PULSE
T J = MAX RATED
R
T A = 25
θ
Figure 8.
JA
Figure 10.
f = 1 MHz
V
= 145
GS
-V
o
-V
C
= 0 V
DS
DS
o
C/W
to Source Voltage
DS(on)
, DRAIN to SOURCE VOLTAGE (V)
, DRAIN TO SOURCE VOLTAGE (V)
Operating Area
10
Capacitance vs Drain
1
Forward Bias Safe
1
SINGLE PULSE
R
T
A
θ
JA
= 25
100
= 145
o
C
10
o
C/W
C
C
C
iss
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100 us
10 ms
100 ms
1 s
1 ms
10 s
DC
10
1000
80
20

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