FDA38N30 Fairchild Semiconductor, FDA38N30 Datasheet - Page 2

• Manufacturer Part Number: FDA38N30
• Description: MOSFET N-CH 300V TO-3
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDA38N30

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 85 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 2600pF @ 25V
• Power - Max: 312W
• Mounting Type: Through Hole
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.07 Ohms
• Forward Transconductance Gfs (max / Min): 6.3 S
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 38 A
• Power Dissipation: 312 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Gate Charge Qg: 60 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDA38N30 Rev. A
Package Marking and Ordering Information
Electrical Characteristics
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.7mH, I
3. I
4. Pulse Test: Pulse width  300s, Duty Cycle  2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Off Characteristics
BV
BV
/
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Q
Q
Q
Switching Characteristics
t
t
t
t
Drain-Source Diode Characteristics
I
I
V
t
Q
Device Marking
Symbol
d(on)
d(off)
f
DSS
GSS
r
S
SM
rr
FS
GS(th)
SD
SD
DS(on)
iss
oss
rss
g(tot)
gs
gd
rr
DSS
T
 38A, di/dt  200A/s, V
DSS
FDA38N30
J
AS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 38A, V
DD
= 50V, R
DD
 BV
Parameter
FDA38N30
Device
G
DSS
= 25, Starting T
, Starting T
J
= 25C
T
J
C
= 25C
= 25°C unless otherwise noted
Package
TO-3PN
I
I
V
V
V
V
V
V
V
f = 1.MHz
V
V
V
R
V
V
dI
D
D
DS
DS
GS
DS
GS
DS
DS
DS
GS
DD
G
GS
GS
F
= 250A, V
= 250A, Referenced to 25C
/dt = 100A/s 
= 25V
= 300V, V
= 240V, T
= V
= 20V, I
= 25V, V
= 240V, I
= 0V, I
= ±30V, V
= 10V, I
= 10V
= 150V, I
= 0V, I
GS
2
, I
SD
SD
D
D
D
GS
Conditions
GS
D
D
GS
= 19A
= 38A
= 19A
= 38A
C
= 250A
GS
DS
= 38A
= 38A
= 10V
Reel Size
= 125
= 0V
= 0V, T
= 0V
= 0V
-
o
C
C
= 25
o
C
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Tape Width
Min.
300
-
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
2600
0.07
500
215
125
170
315
0.3
6.3
4.0
60
60
20
28
40
-
-
-
-
-
-
-
-
Quantity
0.085
Max Units
±100
www.fairchildsemi.com
150
5.0
1.4
10
38
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
30
V/C
nC
nC
nC
C
A
nA
pF
pF
pF
ns
ns
ns
ns
ns

V
V
S
A
A
V