FDA38N30 Fairchild Semiconductor, FDA38N30 Datasheet

MOSFET N-CH 300V TO-3

FDA38N30

Manufacturer Part Number
FDA38N30
Description
MOSFET N-CH 300V TO-3
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDA38N30

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
85 mOhm @ 19A, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
38A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
2600pF @ 25V
Power - Max
312W
Mounting Type
Through Hole
Package / Case
*
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.07 Ohms
Forward Transconductance Gfs (max / Min)
6.3 S
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
38 A
Power Dissipation
312 W
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
Gate Charge Qg
60 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2010 Fairchild Semiconductor Corporation
FDA38N30 Rev. A
MOSFET Maximum Ratings
FDA38N30
N-Channel MOSFET
300V, 38A, 0.085
Features
• R
• Low gate charge ( typical 60 nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• ESD Improved capability
• RoHS Compliant
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
JC
CS
JA
T
DS(on)
STG
rss
= 0.07 ( Typ.) @ V
( typical 60 pF)
G
D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
S
TO-3PN
FDA Series
GS
= 10V, I
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
Parameter
Parameter
C
D
= 25
= 19A
T
C
o
= 25
C)
o
C unless otherwise noted
C
C
= 25
= 100
o
C
o
C)
o
C)
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(Note 1)
Min.
0.24
-
-
FDA38N30
-55 to +150
G
1200
300
±30
150
312
300
4.5
2.5
38
22
38
31
Max.
0.4
D
S
40
-
UniFET
www.fairchildsemi.com
May 2010
Unit
W/
V/ns
Unit
mJ
mJ
C/W
C/W
C/W
C
C
W
V
V
A
A
A
o
C
TM

Related parts for FDA38N30

FDA38N30 Summary of contents

Page 1

... R Thermal Resistance, Case-to-Sink CS R Thermal Resistance, Junction-to-Ambient JA ©2010 Fairchild Semiconductor Corporation FDA38N30 Rev. A Description = 19A These N-Channel enhancement mode power field effect transis- D tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini- ...

Page 2

... Starting  38A, di/dt  200A/s, V  Starting DSS 4. Pulse Test: Pulse width  300s, Duty Cycle  Essentially Independent of Operating Temperature Typical Characteristics FDA38N30 Rev. A Package Reel Size TO-3PN - T = 25°C unless otherwise noted C Conditions I = 250 0V ...

Page 3

... V = 10V GS 0.08 0.07 0.06 0. Drain Current [A] D Figure 5. Capacitance Characteristics 6000 C oss 4000 C iss 2000 C rss Drain-Source Voltage [V] DS FDA38N30 Rev. A Figure 2. Transfer Characteristics Notes: 1. 250  s Pulse Test Figure 4. Body Diode Forward Voltage Variation vs. Source Current 20V GS * Note : ...

Page 4

... Limited DS(on) *Notes: 0 Single Pulse 0. Drain-Source Voltage [V] DS 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 Single pulse -5 10 FDA38N30 Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 0.5 *Notes 250uA D 0.0 -100 50 100 150 Figure 10. Maximum Drain Current 40 10  ...

Page 5

... 3mA 3mA 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms FDA38N30 Rev. A Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V 300nF 300nF DUT DUT Resistive Switching Test Circuit & Waveforms ...

Page 6

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDA38N30 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...

Page 7

... Mechanical Dimensions FDA38N30 Rev. A TO-3PN 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDA38N30 Rev. A F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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