FDS8958A_F085 Fairchild Semiconductor, FDS8958A_F085 Datasheet - Page 5

• Manufacturer Part Number: FDS8958A_F085
• Description: MOSFET N/P-CH 30V DUAL 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS8958A_F085

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A, 5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 575pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 19 mOhms, 42 mOhms
• Forward Transconductance Gfs (max / Min): 25 S, 10 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 7 A, - 5 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8958A_F085TR

FDS8958A_F085 Rev. A
Typical Characteristics: Q1 (N-Channel)
0.01
100
10
0.1
10
8
6
4
2
0
50
40
30
20
10
Figure 9. Maximum Safe Operating Area.
1
0
0.001
0
Figure 7. Gate Charge Characteristics.
0.1
R
I
D
DS(ON)
= 7A
SINGLE PULSE
R
θJA
V
T
GS
A
LIMIT
= 135
= 25
2
= 10V
o
o
C/W
C
V
DS
, DRAIN-SOURCE VOLTAGE (V)
4
Q
1
g
0.01
, GATE CHARGE (nC)
DC
10s
Figure 11. Single Pulse Maximum Power Dissipation.
6
1s
100ms
V
DS
10ms
= 10V
10
8
1ms
0.1
15V
100µs
10
20V
100
12
t
1
, TIME (sec)
5
1
10
800
600
400
200
Figure 10. Unclamped Inductive Switching
1
0.01
0
Figure 8. Capacitance Characteristics.
0
C
rss
10
0.1
V
DS
Capability Figure
5
, DRAIN TO SOURCE VOLTAGE (V)
t
AV
Tj=125
, TIME IN AVALANCHE (mS)
C
oss
SINGLE PULSE
R
θ J A
1
T
10
A
= 135° C/W
= 25° C
100
C
www.fairchildsemi.com
iss
10
Tj=25
15
V
f = 1MHz
GS
= 0 V
1000
100
20