fds8958-nf073 Fairchild Semiconductor, fds8958-nf073 Datasheet

fds8958-nf073

Manufacturer Part Number

fds8958-nf073

Description

Fds8958 Dual N & P-channel Powertrench Mosfet

Manufacturer

Fairchild Semiconductor

Datasheet

1.FDS8958-NF073.pdf (8 pages)

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FDS8958

Dual N & P-Channel PowerTrench MOSFET

General Description

These dual N- and P-Channel enhancement mode

power field effect transistors are produced using

Fairchild

process that has been especially tailored to minimize

on-state ressitance and yet maintain superior switching

performance.

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

2004 Fairchild Semiconductor Corporation

Absolute Maximum Ratings

Thermal Characteristics

Package Marking and Ordering Information

Symbol

DSS

GSS

, T

Device Marking

STG

FDS8958

Semiconductor’s

SO-8

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Pin 1

SO-8

advanced

- Continuous

- Pulsed

FDS8958

Device

Parameter

PowerTrench

= 25°C unless otherwise noted

Reel Size

13”

(Note 1a)

(Note 1b)

(Note 1c)

(Note 1a)

(Note 1)

Features

Q1:

7.0A, 30V

Q2:

-5A, -30V

Fast switching speed

High power and handling capability in a widely

used surface mount package

N-Channel

P-Channel

Tape width

12mm

-55 to +150

DS(on)

1.6

0.9

= 0.028

= 0.040

= 0.052

= 0.080

-20

-5

October 2004

@ V

2500 units

Quantity

FDS8958 Rev A(W)

= 10V

= 4.5V

= -10V

= -4.5V

Units

C/W

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