FDS8958A_F085 Fairchild Semiconductor, FDS8958A_F085 Datasheet - Page 2

• Manufacturer Part Number: FDS8958A_F085
• Description: MOSFET N/P-CH 30V DUAL 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS8958A_F085

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A, 5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 575pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 19 mOhms, 42 mOhms
• Forward Transconductance Gfs (max / Min): 25 S, 10 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 7 A, - 5 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8958A_F085TR

FDS8958A_F085 Rev. A
BV
∆BV
I
I
I
V
∆V
R
I
g
C
C
C
R
Electrical Characteristics
Symbol
Off Characteristics
DSS
GSSF
GSSR
On Characteristics
Dynamic Characteristics
D(on)
FS
∆T
GS(th)
∆T
DS(on)
iss
oss
rss
G
DSS
GS(th)
DSS
J
J
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage, Forward V
Gate-Body Leakage, Reverse V
Parameter
(Note 2)
V
V
I
I
V
V
V
V
V
V
V
V
V
V
Q1
V
Q2
V
D
D
V
V
V
I
I
V
V
D
D
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
GS
= 250 µA, Referenced to 25°C
= -250 µA, Referenced to 25°C
DS
GS
GS
DS
DS
GS
GS
= 250 µA, Referenced to 25°C
= -250 µA, Referenced to 25°C
= V
= V
= 5 V,
= -5 V,
= 15 V, V
= 10 V,
= 10 V, I
= 4.5 V,
= -10 V,
= -10 V, I
= -4.5 V,
= 10 V,
= -10 V,
= 15 mV,
= -15 V, V
= 0 V,
= 0 V,
= 24 V,
= -24 V,
= 20 V,
= -20 V,
GS
GS
T
Test Conditions
A
,
,
= 25°C unless otherwise noted
GS
D
D
GS
= 7 A, T
= -5 A, T
= 0 V, f = 1.0 MHz
2
= 0 V, f = 1.0 MHz
I
I
V
V
V
V
I
I
I
I
I
I
V
V
I
I
f = 1.0 MHz
D
D
D
D
D
D
D
D
D
D
GS
GS
DS
DS
DS
DS
= 250 µA
= -250 µA
= 250 µA
= -250 µA
= 7 A
= 6 A
= -5 A
= -4 A
= 7 A
=-5 A
= 0 V
= 0 V
= 0 V
= 0 V
= 5 V
= -5 V
J
= 125°C
J
= 125°C
Type Min Typ Max Units
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
All
All
-20
-30
20
-1
30
1
-1.7
-4.5
575
528
145
132
1.9
4.5
2.1
6.0
-23
19
27
24
42
57
65
25
10
65
70
25
www.fairchildsemi.com
-100
100
28
42
40
52
78
80
-3
-1
3
1
mV/°C
mV/°C
mΩ
pF
pF
pF
µA
nA
nA
Ω
V
A
S
V