MPC564MZP66 Freescale Semiconductor, MPC564MZP66 Datasheet - Page 1312
MPC564MZP66
Manufacturer Part Number
MPC564MZP66
Description
IC MCU 512K FLASH 66MHZ 388-BGA
Manufacturer
Freescale Semiconductor
Series
MPC5xxr
Specifications of MPC564MZP66
Core Processor
PowerPC
Core Size
32-Bit
Speed
66MHz
Connectivity
CAN, EBI/EMI, SCI, SPI, UART/USART
Peripherals
POR, PWM, WDT
Number Of I /o
56
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
2.5 V ~ 2.7 V
Data Converters
A/D 32x10b
Oscillator Type
External
Operating Temperature
-40°C ~ 125°C
Package / Case
388-BGA
For Use With
MPC564EVB - KIT EVAL FOR MPC561/562/563/564
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
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66-MHz Electrical Characteristics
should be positioned so that the thermocouple junction rests on the package. A small amount of epoxy is
placed over the thermocouple junction and over about one mm of wire extending from the junction. The
thermocouple wire is placed flat against the package case to avoid measurement errors caused by cooling
effects of the thermocouple wire.
G.4.1
The website for Semiconductor Equipment and Materials International is www.semi.org and their global
headquarters address is: 3081 Zanker Road, San Jose CA, 95134; 1-408-943-6900.
MIL-SPEC and EIA/JESD (JEDEC) specifications are available from Global Engineering Documents on
the WEB at www.global.ihs.com or 800-854-7179 or 303-397-7956.
JEDEC specifications are available on the WEB at www.jedec.org.
G.5
G-6
1. C.E. Triplett and B. Joiner, “An Experimental Characterization of a 272 PBGA Within an
2. B. Joiner and V. Adams, “Measurement and Simulation of Junction to Board Thermal Resistance
1
2
ESD for Human Body Model (HBM)
HBM Circuit Description
ESD for Machine Model (MM)
MM Circuit Description
Number of pulses per pin
Positive pulses (MM)
Negative pulses (MM)
Positive pulses (HBM)
Negative pulses (HBM)
Interval of Pulses
Automotive Engine Controller Module,” Proceedings of SemiTherm, San Diego, 1998, pp. 47-54.
and Its Application in Thermal Modeling,” Proceedings of SemiTherm, San Diego, 1999, pp.
212-220.
All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated
Circuits.
A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification requirements. Complete DC parametric and functional testing shall be performed per applicable
device specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
ESD Protection
Thermal References
Characteristics
2
MPC561/MPC563 Reference Manual, Rev. 1.2
1
Table G-3. ESD Protection
Symbol
R1
R1
—
—
—
—
—
C
C
Value
2000
1500
100
200
200
0
3
3
1
1
1
Freescale Semiconductor
Units
pF
pF
—
Ω
Ω
S
V
V
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