UPD70F3744GJ-GAE-AX Renesas Electronics America, UPD70F3744GJ-GAE-AX Datasheet - Page 755

• Manufacturer Part Number: UPD70F3744GJ-GAE-AX
• Description: MCU 32BIT V850ES/JX3 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: V850ES/Jx3r

Specifications of UPD70F3744GJ-GAE-AX

• Core Processor: RISC
• Core Size: 32-Bit
• Speed: 32MHz
• Connectivity: CSI, EBI/EMI, I²C, UART/USART
• Peripherals: DMA, LVD, PWM, WDT
• Number Of I /o: 128
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 40K x 8
• Voltage - Supply (vcc/vdd): 2.85 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

V850ES/JJ3
27.1 Features
R01UH0016EJ0400 Rev.4.00
Sep 30, 2010
The V850ES/JJ3 incorporates a flash memory.
Flash memory versions offer the following advantages for development environments and mass production applications.
For altering software after the V850ES/JJ3 is soldered onto the target system.
For data adjustment when starting mass production.
For differentiating software according to the specification in small scale production of various models.
For facilitating inventory management.
For updating software after shipment.
4-byte/1-clock access (when instruction is fetched)
Capacity: 1024 KB/768 KB/512 KB/384 KB
Write voltage: Erase/write with a single power supply
Rewriting method
• Rewriting by communication with dedicated flash programmer via serial interface (on-board/off-board
• Rewriting flash memory by user program (self programming)
Flash memory write prohibit function supported (security function)
Safe rewriting of entire flash memory area by self programming using boot swap function
Interrupts can be acknowledged during self programming.
programming)
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PD70F3743: 384 KB flash memory
PD70F3744: 512 KB flash memory
PD70F3745: 768 KB flash memory
PD70F3746: 1024 KB flash memory
CHAPTER 27 FLASH MEMORY
CHAPTER 27 FLASH MEMORY
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