D64F3437TFLH16V Renesas Electronics America, D64F3437TFLH16V Datasheet - Page 517
![MCU 5V 60K PB-FREE 100-TQFP](/photos/28/61/286108/100-tqfp_sml.jpg)
D64F3437TFLH16V
Manufacturer Part Number
D64F3437TFLH16V
Description
MCU 5V 60K PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300r
Datasheet
1.HD64F3437STF16V.pdf
(755 pages)
Specifications of D64F3437TFLH16V
Core Processor
H8/300
Core Size
8-Bit
Speed
16MHz
Connectivity
Host Interface, I²C, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
74
Program Memory Size
60KB (60K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
D64F3437TFLH16V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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High-Speed, High-Reliability Erasing: The H8/3437F flash memory uses a high-speed, high-
reliability erasing procedure. This procedure provides enhanced erasing speed without subjecting
the device to voltage stress and without sacrificing data reliability. Figure 20.16 shows the basic
high-speed, high-reliability erasing flowchart. Tables 20.15 and 20.16 list the electrical
characteristics during erasing.
Note: *
Address + 1
Follow the high-speed, high-reliability programming flowchart in programming all bits. If some bits
are already programmed to 0, program only the bits that have not yet been programmed.
address
Figure 20.16 High-Speed, High-Reliability Erasing
No
Erase setup/erase command
Erase-verify command
Program all bits to 0*
Last address?
Wait (10 ms)
Verification?
Address = 0
Wait (6 s)
n + 1
n = 0
Start
End
Go
Yes
n
No go
n = 3000?
Fail
Yes
No
485
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