D64F3437TFLH16V Renesas Electronics America, D64F3437TFLH16V Datasheet - Page 425
![MCU 5V 60K PB-FREE 100-TQFP](/photos/28/61/286108/100-tqfp_sml.jpg)
D64F3437TFLH16V
Manufacturer Part Number
D64F3437TFLH16V
Description
MCU 5V 60K PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300r
Datasheet
1.HD64F3437STF16V.pdf
(755 pages)
Specifications of D64F3437TFLH16V
Core Processor
H8/300
Core Size
8-Bit
Speed
16MHz
Connectivity
Host Interface, I²C, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
74
Program Memory Size
60KB (60K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
D64F3437TFLH16V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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User Programming Mode Execution Procedure (Example)*: Figure 19.7 shows the execution
procedure for user programming mode when the on-board update routine is executed in RAM.
Note: * Do not apply 12 V to the FV
Note: * After the update is finished, when input of 12 V to the FV
1
2
3
4
5
6
7
8
from being accidentally programmed or erased due to program runaway etc., apply 12 V
to FV
overerasing due to program runaway can cause memory cells to malfunction. While 12 V
is applied, the watchdog timer should be running and enabled to halt runaway program
execution, so that program runaway will not lead to overprogramming or overerasing. For
details on applying, releasing, and shutting off V
Programming and Erasing Precautions (5).
Transfer on-board update routine
Branch to flash memory on-board
memory read setup time (t
executed. This is the required setup time from when the FV
2 V) level after 12 V is released until flash memory can be read.
on-board update routine in RAM
PP
(exit user programming mode)
Set MD
Branch to application program
only when programming or erasing flash memory. Overprogramming or
(apply V
(user programming mode)
on-board update program
Figure 19.7 User Programming Mode Operation (Example)
Branch to flash memory
(update flash memory)
update routine in RAM
Execute flash memory
in flash memory *
Start from reset
1
Release FV
FV
and MD
IH
into RAM
PP
to V
= 12 V
CC
0
to 10 or 11
to MD
PP
PP
FRS
1
pin during normal operation. To prevent flash memory
)
) must elapse before any program in flash memory is
6. Execute the flash memory on-board
7. Change the voltage at the FV
8. After the on-board update of flash
2. Branch to the flash memory on-board
3. Transfer the on-board update routine
4. Branch to the on-board update routine
5. Apply 12 V to the FV
Procedure
The flash memory on-board update
program is written in flash memory ahead
of time by the user.
1. Set MD1 and MD0 of the H8/3434F to
PP
an application program in flash
memory.
user programming mode.
update routine in RAM, to perform an
on-board update of the flash memory.
from 12 V to V
programming mode.
memory ends, execution branches to
10 or 11, and start from a reset.
update program in flash memory.
into RAM.
that was transferred into RAM.
, see section 19.7, Flash Memory
PP
PP
pin is released, the flash
CC
pin reaches the (V
, to exit user
PP
pin, to enter
PP
pin
CC
+
393
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