DF2367VTE33 Renesas Electronics America, DF2367VTE33 Datasheet - Page 755

IC H8S MCU FLASH 384K 120TQFP

DF2367VTE33

Manufacturer Part Number
DF2367VTE33
Description
IC H8S MCU FLASH 384K 120TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of DF2367VTE33

Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
84
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
120-TQFP, 120-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2367VTE33
HD64F2367VTE33

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2367VTE33V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 19 Flash Memory (0.35-μm F-ZTAT Version)
19.3
Block Configuration
Figure 19.5 shows the block configuration of 384-kbyte flash memory. The thick lines indicate
erasing units, the narrow lines indicate programming units, and the values are addresses. The 384-
kbyte flash memory is divided into 64 kbytes (5 blocks), 32 kbytes (1 block), and 4 kbytes (8
blocks). Erasing is performed in these divided units. Programming is performed in 128-byte units
starting from an address whose lower eight bits are H'00 or H'80.
Rev.6.00 Mar. 18, 2009 Page 695 of 980
REJ09B0050-0600

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