D12332VFC25 Renesas Electronics America, D12332VFC25 Datasheet - Page 862

MCU 3V 0K 144-QFP

D12332VFC25

Manufacturer Part Number
D12332VFC25
Description
MCU 3V 0K 144-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet

Specifications of D12332VFC25

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
106
Program Memory Type
ROMless
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 12x10b; D/A 4x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
144-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Other names
HD6412332VFC25
HD6412332VFC25

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
D12332VFC25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Table 19.36 PROM Mode Commands
Command Name
Memory read mode
Auto-program mode
Auto-erase mode
Status read mode
Legend:
RA: Read address
PA: Program address
Notes: 1. In auto-program mode, 129 cycles are required for command writing by a simultaneous
19.20.4 Memory Read Mode
• After the end of an auto-program, auto-erase, or status read operation, the command wait state
• Command writes can be performed in memory read mode, just as in the command wait state.
• Once memory read mode has been entered, consecutive reads can be performed.
• After power-on, memory read mode is entered.
Rev.4.00 Sep. 07, 2007 Page 830 of 1210
REJ09B0245-0400
is entered. To read memory contents, a transition must be made to memory read mode by
means of a command write before the read is executed.
2. In memory read mode, the number of cycles depends on the number of address write
128-byte write.
cycles (n).
Number
of Cycles
1 + n
129
2
2
Mode
Write
Write
Write
Write
Address Data
X
X
X
X
1st Cycle
H'40
H'20
H'00
H'71
Write
Write
Mode
Read
Write
2nd Cycle
Address Data
RA
PA
X
X
Dout
Din
H'20
H'71

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