ST7FLI49MK1T6 STMicroelectronics, ST7FLI49MK1T6 Datasheet - Page 156

MCU 8BIT SGL VOLT FLASH 32-LQFP

ST7FLI49MK1T6

Manufacturer Part Number
ST7FLI49MK1T6
Description
MCU 8BIT SGL VOLT FLASH 32-LQFP
Manufacturer
STMicroelectronics
Series
ST7r
Datasheet

Specifications of ST7FLI49MK1T6

Core Processor
ST7
Core Size
8-Bit
Speed
8MHz
Connectivity
I²C
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
24
Program Memory Size
4KB (4K x 8)
Program Memory Type
FLASH
Eeprom Size
128 x 8
Ram Size
384 x 8
Voltage - Supply (vcc/vdd)
2.4 V ~ 5.5 V
Data Converters
A/D 10x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
32-LQFP
Processor Series
ST7FLI4x
Core
ST7
Data Bus Width
8 bit
Data Ram Size
384 B
Interface Type
I2C
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
24
Number Of Timers
5
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 10 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Electrical characteristics
13.8
13.8.1
156/188
EMC (electromagnetic compatibility) characteristics
Susceptibility tests are performed on a sample basis during product characterization.
Functional EMS (electromagnetic susceptibility)
Based on a simple running application on the product (toggling two LEDs through I/O ports),
the product is stressed by two electromagnetic events until a failure occurs (indicated by the
LEDs).
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Table 79.
Symbol
V
V
FESD
FFTB
ESD: Electrostatic discharge (positive and negative) is applied on all pins of the device
until a functional disturbance occurs. This test conforms with the IEC 1000-4-2
standard.
FTB: A burst of fast transient voltage (positive and negative) is applied to V
through a 100 pF capacitor, until a functional disturbance occurs. This test conforms
with the IEC 1000-4-4 standard.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can
be reproduced by manually forcing a low state on the RESET pin or the Oscillator pins
for 1 second.
To complete these trials, ESD stress can be applied directly on the device, over the
range of specification values. When unexpected behavior is detected, the software can
be hardened to prevent unrecoverable errors occurring (see application note AN1015).
Corrupted program counter
Unexpected reset
Critical data corruption (control registers...)
Voltage limits to be applied on any I/O pin
applied through 100 pF on V
Fast transient voltage burst limits to be
pins to induce a functional disturbance
EMS test results
to induce a functional disturbance
Parameter
Doc ID 13562 Rev 3
DD
and V
SS
V
V
DD
DD
conforms to IEC 1000-4-2
conforms to IEC 1000-4-4
=5 V, T
=5 V, T
A
A
Conditions
=+25 °C, f
=+25 °C, f
OSC
OSC
=8 MHz
=8 MHz
ST7LITE49M
DD
and V
Level/
Class
2B
3B
SS

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