PIC16F819-I/ML Microchip Technology, PIC16F819-I/ML Datasheet - Page 22

IC MCU FLASH 2KX14 EEPROM 28QFN

PIC16F819-I/ML

Manufacturer Part Number
PIC16F819-I/ML
Description
IC MCU FLASH 2KX14 EEPROM 28QFN
Manufacturer
Microchip Technology
Series
PIC® 16Fr

Specifications of PIC16F819-I/ML

Core Size
8-Bit
Program Memory Size
3.5KB (2K x 14)
Oscillator Type
Internal
Core Processor
PIC
Speed
20MHz
Connectivity
I²C, SPI
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
16
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Data Converters
A/D 5x10b
Operating Temperature
-40°C ~ 85°C
Package / Case
28-VQFN Exposed Pad, 28-HVQFN, 28-SQFN, 28-DHVQFN
Controller Family/series
PIC16F
No. Of I/o's
16
Eeprom Memory Size
256Byte
Ram Memory Size
256Byte
Cpu Speed
20MHz
Processor Series
PIC16F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
256 B
Interface Type
I2C, SPI, SSP
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
16
Number Of Timers
1 x 16 bit
Operating Supply Voltage
2 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, DM163014
Minimum Operating Temperature
- 40 C
On-chip Adc
5 bit
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
XLT28QFN3 - SOCKET TRAN ICE 18DIP/28QFNAC164322 - MODULE SOCKET MPLAB PM3 28/44QFNAC164033 - ADAPTER 28QFN TO 18DIPDV007003 - PROGRAMMER UNIVERSAL PROMATE II
Lead Free Status / Rohs Status
 Details
PICmicro MID-RANGE MCU FAMILY
1.5.3.4
1.5.3.5
1.5.3.6
1.5.3.7
DS31001A-page 1-10
UV Erasable Devices
One-Time-Programmable (OTP) Devices
Flash Devices
EEPROM Devices
The UV erasable version of EPROM program memory devices is optimal for prototype develop-
ment and pilot programs.
These devices can be erased and reprogrammed to any of the configuration modes. Third party
programmers are also available; refer to Microchip’s Third Party Guide (DS00104) for a list of
sources.
The amount of time required to completely erase a UV erasable device depends on: the wave-
length of the light, its intensity, distance from UV source, the process technology of the device
(how small are the memory cells).
The availability of OTP devices is especially useful for customers expecting code changes and
updates.
OTP devices, packaged in plastic packages, permit the user to program them once. In addition
to the program and data EPROM memories, the configuration bits must be programmed.
A Flash device allows its memory to be changed by an electric charge. This means that the sys-
tem can be designed so that programming may be performed in-circuit. Since no window is
required, the lower cost plastic packages can used for these devices.
An EEPROM device allows its memory to be erased by an electric charge. This means that the
system can be designed so that erasure and reprogramming may be performed in-circuit. Since
no window is required, the lower cost plastic packages can used for these devices.
Note:
Fluorescent lights and sunlight both emit ultraviolet light at the erasure wavelength.
Leaving a UV erasable device’s window uncovered could cause, over time, the
devices memory cells to become erased. The erasure time for a fluorescent light is
about three years, while sunlight requires only about one week. To prevent the mem-
ory cells from losing data, an opaque label should be placed over the erasure win-
dow.
1997 Microchip Technology Inc.

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