PIC18F1220-I/SS Microchip Technology, PIC18F1220-I/SS Datasheet - Page 12

IC MCU FLASH 2KX16 A/D 20SSOP

PIC18F1220-I/SS

Manufacturer Part Number
PIC18F1220-I/SS
Description
IC MCU FLASH 2KX16 A/D 20SSOP
Manufacturer
Microchip Technology
Series
PIC® 18Fr

Specifications of PIC18F1220-I/SS

Program Memory Type
FLASH
Program Memory Size
4KB (2K x 16)
Package / Case
20-SSOP
Core Processor
PIC
Core Size
8-Bit
Speed
40MHz
Connectivity
UART/USART
Peripherals
Brown-out Detect/Reset, LVD, POR, PWM, WDT
Number Of I /o
16
Eeprom Size
256 x 8
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
4.2 V ~ 5.5 V
Data Converters
A/D 7x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Processor Series
PIC18F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
256 B
Interface Type
EUSART
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
16
Number Of Timers
4
Operating Supply Voltage
2 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, ICE4000, DM163014, DV164136
Minimum Operating Temperature
- 40 C
On-chip Adc
7-ch x 10-bit
Package
20SSOP
Device Core
PIC
Family Name
PIC18
Maximum Speed
40 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
XLT20SS-1 - SOCKET TRANSITION 18DIP 20SSOPAC164307 - MODULE SKT FOR PM3 28SSOPAC164018 - MODULE SKT PROMATEII 20SSOP
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
PIC18F1230/1330
FIGURE 3-2:
3.1.2
For a PIC18F1230/1330 device, it is possible to erase
one row (64 bytes of data), provided the block is not
code or write-protected. Rows are located at static
boundaries, beginning at program memory address
000000h, extending to the internal program memory
limit (see Section 2.3 “Memory Maps”).
The Row Erase duration is externally timed and is
controlled by PGC. After the WR bit in EECON1 is set,
a NOP is issued, where the 4th PGC is held high for the
duration of the programming time, P9.
DS39752B-page 12
PGC
PGD
4-Bit Command
1
0
ICSP ROW ERASE
2
0
3
1
4
1
P5
BULK ERASE TIMING
1
1
Data Payload
2
1
16-Bit
15 16
0
0
P5A
4-Bit Command
1
0
2
0
3
0
4
0
PGD = Input
P5
1
0
Data Payload
2
0
16-Bit
After PGC is brought low, the programming sequence
is terminated. PGC must be held low for the time
specified by parameter P10 to allow high-voltage
discharge of the memory array.
The code sequence to Row Erase a PIC18F1230/1330
device is shown in Table 3-3. The flowchart shown in
Figure 3-3 depicts the logic necessary to completely
erase a PIC18F1230/1330 device. The timing diagram
that details the Start Programming command and
parameters P9 and P10 is shown in Figure 3-5.
15 16
Note:
0
0
P5A
4-Bit Command
1
0
The TBLPTR register can point to any byte
within the row intended for erase.
2
0
3
0
4
0
© 2009 Microchip Technology Inc.
Erase Time
P11
P10
Data Payload
1
16-Bit
n
2
n

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