ATA6616-P3QW Atmel, ATA6616-P3QW Datasheet - Page 258

• Manufacturer Part Number: ATA6616-P3QW
• Description: TXRX MULTICHIP MOD LIN SIP 38QFN
• Manufacturer: Atmel
• Series: AVR® ATA66 LIN-SBCr

Specifications of ATA6616-P3QW

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: I²C, LIN, SPI, UART/USART, USI
• Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
• Number Of I /o: 16
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 512 x 8
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 11x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 38-VQFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 4-100. Programming the Flash Waveforms
4.22.7.5
258
PAGEL / BS1
RESET +12V
XA1 / BS2
RDY/BSY
XTAL1
DATA
Atmel ATA6616/ATA6617
XA0
WR
OE
Programming the EEPROM
0x10
A
ADDR. LOW
Note:
The EEPROM is organized in pages, see
EEPROM, the program data is latched into a page buffer. This allows one page of data to be
programmed simultaneously. The programming algorithm for the EEPROM data memory is as
follows (refer to
Data loading):
A: Load Command “0001 0001
G: Load Address High Byte (0x00 - 0xFF).
B: Load Address Low Byte (0x00 - 0xFF).
C: Load Data (0x00 - 0xFF).
E: Latch data (give PAGEL a positive pulse).
K: Repeat A through E until the entire buffer is filled.
L: Program EEPROM page
B
1. Set BS1 to “0”.
2. Give WR a negative pulse. This starts programming of the EEPROM page. RDY/BSY
3. Wait until to RDY/BSY goes high before programming the next page (See
goes low.
4-101
DATA LOW
1. “XX” is don’t care. The letters refer to the programming description above.
C
for signal waveforms).
DATA HIGH
D
“Programming the Flash” on page 256
(1)
E
XX
ADDR. LOW
B
b
”.
DATA LOW
C
F
Table 4-74 on page
DATA HIGH
D
XX
E
for details on Command, Address and
ADDR. HIGH
G
253. When programming the
H
XX
9132D–AUTO–12/10
Figure