PIC16LF1826-I/MV Microchip Technology, PIC16LF1826-I/MV Datasheet - Page 116

• Manufacturer Part Number: PIC16LF1826-I/MV
• Description: IC MCU 8BIT FLASH 28UQFN
• Manufacturer: Microchip Technology
• Series: PIC® XLP™ 16Fr

Specifications of PIC16LF1826-I/MV

• Core Size: 8-Bit
• Program Memory Size: 3.5KB (2K x 14)
• Core Processor: PIC
• Speed: 32MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 16
• Program Memory Type: FLASH
• Eeprom Size: 256 x 8
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 12x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-UFQFN Exposed Pad
• Controller Family/series: PIC16LF
• No. Of I/o's: 16
• Eeprom Memory Size: 256Byte
• Ram Memory Size: 256Byte
• Cpu Speed: 32MHz
• No. Of Timers: 3
• Processor Series: PIC16LF
• Core: PIC
• Data Ram Size: 256 B
• Maximum Clock Frequency: 32 KHz
• Number Of Programmable I/os: 16
• Number Of Timers: 3
• Operating Supply Voltage: 1.8 V to 3.6 V
• Maximum Operating Temperature: + 125 C
• 3rd Party Development Tools: 52715-96, 52716-328, 52717-734
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 12 Channel
• On-chip Dac: 5 bit
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PIC16F/LF1826/27
11.4
When modifying existing data in a program memory
row, and data within that row must be preserved, it must
first be read and saved in a RAM image. Program
memory is modified using the following steps:
1.
2.
3.
4.
5.
6.
7.
8.
TABLE 11-2:
EXAMPLE 11-3:
DS41391C-page 116
* This code block will read 1 word of program memory at the memory address:
*
*
Load the starting address of the row to be mod-
ified.
Read the existing data from the row into a RAM
image.
Modify the RAM image to contain the new data
to be written into program memory.
Load the starting address of the row to be rewrit-
ten.
Erase the program memory row.
Load the write latches with data from the RAM
image.
Initiate a programming operation.
Repeat steps 6 and 7 as many times as required
to reprogram the erased row.
PROG_ADDR_LO (must be 00h-08h) data will be returned in the variables;
PROG_DATA_HI, PROG_DATA_LO
BANKSEL
MOVLW
MOVWF
CLRF
BSF
BCF
BSF
NOP
NOP
BSF
MOVF
MOVWF
MOVF
MOVWF
Modifying Flash Program Memory
8000h-8003h
8007h-8008h
Address
8006h
EEADRL
PROG_ADDR_LO
EEADRL
EEADRH
EECON1,CFGS
INTCON,GIE
EECON1,RD
INTCON,GIE
EEDATL,W
PROG_DATA_LO
EEDATH,W
PROG_DATA_HI
USER ID, DEVICE ID AND CONFIGURATION WORD ACCESS (CFGS = 1)
CONFIGURATION WORD AND DEVICE ID ACCESS
Configuration Words 1 and 2
Device ID/Revision ID
; Select correct Bank
;
; Store LSB of address
; Clear MSB of address
; Select Configuration Space
; Disable interrupts
; Initiate read
; Executed (See Figure 11-1)
; Ignored (See Figure 11-1)
; Restore interrupts
; Get LSB of word
; Store in user location
; Get MSB of word
; Store in user location
Function
User IDs
Preliminary
11.5
Instead of accessing program memory or EEPROM
data memory, the User ID’s, Device ID/Revision ID and
Configuration Words can be accessed when CFGS = 1
in the EECON1 register. This is the region that would
be pointed to by PC<15> = 1, but not all addresses are
accessible. Different access may exist for reads and
writes. Refer to Table 11-2.
When read access is initiated on an address outside
the parameters listed in Table 11-2, the EEDATH:EED-
ATL register pair is cleared.
Read Access
User ID, Device ID and
Configuration Word Access
Yes
Yes
Yes
 2010 Microchip Technology Inc.
Write Access
Yes
No
No