ATTINY13A-SU Atmel, ATTINY13A-SU Datasheet - Page 107

• Manufacturer Part Number: ATTINY13A-SU
• Description: IC MCU AVR 1K FLASH 20MHZ 8SOIC
• Manufacturer: Atmel
• Series: AVR® ATtinyr

Specifications of ATTINY13A-SU

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 20MHz
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 6
• Program Memory Size: 1KB (512 x 16)
• Program Memory Type: FLASH
• Eeprom Size: 64 x 8
• Ram Size: 64 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
• Cpu Family: ATtiny
• Device Core: AVR
• Device Core Size: 8b
• Frequency (max): 20MHz
• Interface Type: SPI
• Total Internal Ram Size: 64Byte
• # I/os (max): 6
• Number Of Timers - General Purpose: 1
• Operating Supply Voltage (typ): 2.5/3.3/5V
• Operating Supply Voltage (max): 5.5V
• Operating Supply Voltage (min): 1.8V
• On-chip Adc: 4-chx10-bit
• Instruction Set Architecture: RISC
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC EIAJ
• Processor Series: ATTINY1x
• Core: AVR8
• Data Bus Width: 8 bit
• Data Ram Size: 64 B
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 6
• Number Of Timers: 1
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWAVR, EWAVR-BL
• Development Tools By Supplier: ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT, ATAKSTK511
• Minimum Operating Temperature: - 40 C
• Package: 8SOIC EIAJ
• Family Name: ATtiny
• Maximum Speed: 20 MHz
• Operating Supply Voltage: 2.5|3.3|5 V
• For Use With: ATSTK600-DIP40 - STK600 SOCKET/ADAPTER 40-PDIP770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAG770-1004 - ISP 4PORT FOR ATMEL AVR MCU SPIATAVRDRAGON - KIT DRAGON 32KB FLASH MEM AVRATAVRISP2 - PROGRAMMER AVR IN SYSTEMATJTAGICE2 - AVR ON-CHIP D-BUG SYSTEM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Connectivity: -
• Lead Free Status / Rohs Status: Compliant

17.6.1
8126E–AVR–07/10
Serial Programming Algorithm
When writing serial data to the ATtiny13A, data is clocked on the rising edge of SCK.
When reading data from the ATtiny13A, data is clocked on the falling edge of SCK. See
18-4 on page 122
To program and verify the ATtiny13A in the Serial Programming mode, the following sequence is
recommended (see four byte instruction formats in
1. Power-up sequence:
2. Wait for at least 20 ms and enable serial programming by sending the Programming
3. The serial programming instructions will not work if the communication is out of syn-
4. The Flash is programmed one page at a time. The memory page is loaded one byte at
5. A: The EEPROM array is programmed one byte at a time by supplying the address and
6. Any memory location can be verified by using the Read instruction which returns the
7. At the end of the programming session, RESET can be set high to commence normal
8. Power-off sequence (if needed):
Apply power between V
tems, the programmer can not guarantee that SCK is held low during power-up. In this
case, RESET must be given a positive pulse after SCK has been set to “0”. The pulse
duration must be at least t
page 120
Enable serial instruction to pin MOSI.
chronization. When in sync. the second byte (0x53), will echo back when issuing the
third byte of the Programming Enable instruction. Whether the echo is correct or not, all
four bytes of the instruction must be transmitted. If the 0x53 did not echo back, give
RESET a positive pulse and issue a new Programming Enable command.
a time by supplying the 4 LSB of the address and data together with the Load Program
memory Page instruction. To ensure correct loading of the page, the data low byte must
be loaded before data high byte is applied for a given address. The Program memory
Page is stored by loading the Write Program memory Page instruction with the 5 MSB
of the address. If polling (
before issuing the next page. (See
gramming interface before the Flash write operation completes can result in incorrect
programming.
data together with the appropriate Write instruction. An EEPROM memory location is
first automatically erased before new data is written. If polling (
the user must wait at least t
page
grammed.
B: The EEPROM array is programmed one page at a time. The Memory page is loaded
one byte at a time by supplying the 2 LSB of the address and data together with the
Load EEPROM Memory Page instruction. The EEPROM Memory Page is stored by
loading the Write EEPROM Memory Page Instruction with the 4 MSB of the address.
When using EEPROM page access only byte locations loaded with the Load EEPROM
Memory Page instruction is altered. The remaining locations remain unchanged. If poll-
ing (
next page (See
file(s) need to be programmed.
content at the selected address at serial output MISO.
operation.
Set RESET to “1”.
Turn V
RDY/BSY
108.) In a chip erased device, no 0xFFs in the data file(s) need to be pro-
CC
power off.
and
and
) is not used, the used must wait at least t
Figure 19-58 on page
Table 17-6 on page
Figure 18-3 on page 122
CC
RDY/BSY
RST
and GND while RESET and SCK are set to “0”. In some sys-
WD_EEPROM
(miniumum pulse widht of RESET pin, see
) is not used, the user must wait at least t
Table 17-8 on page
105). In a chip erased device, no 0xFF in the data
153) plus two CPU clock cycles.
before issuing the next byte. (See
for timing details.
Table 17-9 on page
WD_EEPROM
108.) Accessing the serial pro-
RDY/BSY
108):
before issuing the
) is not used,
Table 18-4 on
Table 17-8 on
WD_FLASH
Figure
107