M30624FGAFP#U5 Renesas Electronics America, M30624FGAFP#U5 Datasheet - Page 309

IC M16C MCU FLASH 100QFP

M30624FGAFP#U5

Manufacturer Part Number
M30624FGAFP#U5
Description
IC M16C MCU FLASH 100QFP
Manufacturer
Renesas Electronics America
Series
M16C™ M16C/60r
Datasheets

Specifications of M30624FGAFP#U5

Core Processor
M16C/60
Core Size
16-Bit
Speed
16MHz
Connectivity
SIO, UART/USART
Peripherals
DMA, PWM, WDT
Number Of I /o
85
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
20K x 8
Voltage - Supply (vcc/vdd)
4.2 V ~ 5.5 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 85°C
Package / Case
100-QFP
Cpu Family
M16C
Device Core Size
16/32Bit
Frequency (max)
16MHz
Interface Type
SIM/UART
Total Internal Ram Size
20KB
# I/os (max)
87
Number Of Timers - General Purpose
11
Operating Supply Voltage (typ)
5V
Operating Supply Voltage (max)
5.5V
Operating Supply Voltage (min)
4.2V
On-chip Adc
10-chx10-bit
On-chip Dac
2-chx8-bit
Instruction Set Architecture
CISC
Operating Temp Range
-20C to 85C
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
100
Package Type
PQFP
For Use With
867-1000 - KIT QUICK START RENESAS 62PM3062PT3-CPE-3 - EMULATOR COMPACT M16C/62P/30P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Compliant

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Timing
1-288
Switching characteristics (referenced to V
85
Table 1.31.23. Memory expansion and microprocessor modes
Note 2: Specify a product of –40°C to 85°C to use it.
Note 1: Calculated according to the BCLK frequency as follows:
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
d(BCLK-AD)
h(BCLK-AD)
h(RD-AD)
h(WR-AD)
d(BCLK-CS)
h(BCLK-CS)
h(RD-CS)
h(WR-CS)
d(BCLK-RD)
h(BCLK-RD)
d(BCLK-WR)
h(BCLK-WR)
d(BCLK-DB)
h(BCLK-DB)
d(DB-WR)
h(WR-DB)
d(AD-ALE)
h(ALE-AD)
d(AD-RD)
d(AD-WR)
dZ(RD-AD)
d(BCLK-ALE)
h(BCLK-ALE)
Symbol
o
C (Note 2), CM15 = “1” unless otherwise specified)
td(AD – ALE) =
th(RD – AD) =
th(WR – AD) =
th(RD – CS) =
th(WR – CS) =
td(DB – WR) =
th(WR – DB) =
Address output delay time
Address output hold time (BCLK standard)
Address output hold time (RD standard)
Address output hold time (WR standard)
Chip select output delay time
Chip select output hold time (RD standard)
Chip select output hold time (WR standard)
RD signal output delay time
RD signal output hold time
WR signal output delay time
WR signal output hold time
Data output delay time (BCLK standard)
Data output delay time (WR standard)
Data output hold time (WR standard)
ALE signal output delay time (BCLK standard)
ALE signal output hold time (BCLK standard)
ALE signal output delay time (Address standard)
ALE signal output hold time(Address standard)
Post-address WR signal output delay time
Address output floating start time
Chip select output hold time (BCLK standard)
Data output hold time (BCLK standard)
Post-address RD signal output delay time
(when accessing external memory area with wait, and select multiplexed bus)
f(BCLK) X 2
f(BCLK) X 2
f(BCLK) X 2
f(BCLK) X 2
f(BCLK) X 2
f(BCLK) X 2
f(BCLK) X 2
10
Parameter
10
10
10
10
10
10
9
9
9
9
9
9
9
X 3
– 80
– 45
[ns]
[ns]
[ns]
[ns]
[ns]
[ns]
[ns]
CC
= 3V, V
Measuring condition
Figure 1.31.1
SS
= 0V at Topr = – 20
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
Min.
– 4
40
4
Standard
4
4
0
0
0
0
o
Max.
C to 85
60
60
60
60
80
60
8
o
Unit
Mitsubishi microcomputers
(Low voltage version)
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
C / – 40
M16C / 62M Group
o
C to

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