DF2505BR26DV Renesas Electronics America, DF2505BR26DV Datasheet - Page 714
DF2505BR26DV
Manufacturer Part Number
DF2505BR26DV
Description
IC H8S/2505 MCU FLASH 176-LFBGA
Manufacturer
Renesas Electronics America
Series
H8® H8S/2500r
Specifications of DF2505BR26DV
Core Processor
H8S/2000
Core Size
16-Bit
Speed
26MHz
Connectivity
I²C, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
104
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 16x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
176-LFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2505BR26DV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Section 20 Flash Memory
Note: * Not available in this LSI.
• Emulation function of flash memory by using the on-chip RAM
• Protect Mode
• Programming/erasing time
• Number of programming
Rev. 6.00 Sep. 24, 2009 Page 666 of 928
REJ09B0099-0600
User Branch*
Programming is carried out in 128-byte units through several steps such as applying
programming pulse and reading verify. Erasing is carried out in 1-divided-block unit through
several processing steps. Between these steps, a setting can be created to execute user process
routines. This setting is called "with user branch."
As flash memory is overlapped with part of the on-chip RAM, the flash memory programming
can be emulated in real time.
Software protect by register setting is provided to set the protect status of programming/erasing
flash memory
When an error is detected, the mode is changed to error protect mode to abort
programming/erasing processing.
The flash memory programming time is 3 ms (typ) in 128-byte simultaneous programming and
25 μs per byte. The erasing time is 1000 ms (typ) per 64-kbyte block.
The number of flash memory programming can be minimum 100 times.
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