DF2170BVTE33V Renesas Electronics America, DF2170BVTE33V Datasheet - Page 534

IC H8S/2170 MCU FLASH 100-TQFP

DF2170BVTE33V

Manufacturer Part Number
DF2170BVTE33V
Description
IC H8S/2170 MCU FLASH 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet

Specifications of DF2170BVTE33V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
SCI, USB
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
76
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
For Use With
HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)3DK2166 - DEV EVAL KIT H8S/2166
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Data Converters
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2170BVTE33V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Table 18.4 Permissible Output Currents
Conditions: V
Caution: 1. To protect the LSI’s reliability, do not exceed the output current values in table 18.4.
Rev. 2.00, 03/04, page 500 of 534
Item
Permissible output low
current (per pin)
Permissible output low
current (total)
Permissible output high
current (per pin)
Permissible output high
current (total)
2. To drive the Darlington transistor directly, inset a current-limit resister between the
LSI and the transistor, as shown in figure 18.1.
CC
= 3.0 V to 3.6 V, V
Figure 18.1 Sample of Dalington Transistor Drive Circuit
Ports 1 and 4
All output pins
execept ports 1 and 4
Total of all output pins ΣI
All output pins
Total of all output pins Σ−I
This LSI
Port
SS
= 0 V
2 kΩ
Symbol
I
−I
OL
OH
OL
OH
Darlington transistor
Min.
Typ.
Max.
1.6
2
60
2
30
Unit
mA
mA
mA
mA

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