DF2170BVTE33V Renesas Electronics America, DF2170BVTE33V Datasheet - Page 433

• Manufacturer Part Number: DF2170BVTE33V
• Description: IC H8S/2170 MCU FLASH 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2170BVTE33V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: SCI, USB
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 76
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• For Use With: HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)3DK2166 - DEV EVAL KIT H8S/2166
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -

b Flash pass/fail parameter (FPFR: general register R0L of CPU)
This parameter returns value of the erasing processing result.
Bit
31 to 8
7
6
5
4
3
2
1
0
Bit
7
6
Bit Name

EB7
EB6
EB5
EB4
EB3
EB2
EB1
EB0
Bit Name

MD
Initial
Value









Initial
Value


R/W

R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W

R/W
Description
Unused
These bits should be cleared to H'0.
Erase Block
Set the erase-block number in the range from 0 to 11. 0
corresponds to the EB0 block and 11 corresponds to the
EB11 block. An error occurs when the number other
than 0 to 11 is set.
Description
Unused
Return 0.
Programming Mode Related Setting Error Detect
Returns the check result that a high level signal is input
to the FWE pin and the error protection state is not
entered. When the low level signal is input to the FWE
pin or the error protection state is entered, 1 is written to
this bit. The state can be confirmed with the FWE and
FLER bits in FCCS. For conditions to enter the error
protection state, see section 14.5.3, Error Protection.
1: Programming cannot be performed (FWE = 0 or
0: FWE and FLER settings are normal (FWE = 1, FLER
= 0)
FLER = 1)
Rev. 2.00, 03/04, page 399 of 534