C8051F321-GM Silicon Laboratories Inc, C8051F321-GM Datasheet - Page 111

IC 8051 MCU 16K FLASH 28MLP

C8051F321-GM

Manufacturer Part Number
C8051F321-GM
Description
IC 8051 MCU 16K FLASH 28MLP
Manufacturer
Silicon Laboratories Inc
Series
C8051F32xr
Datasheets

Specifications of C8051F321-GM

Program Memory Type
FLASH
Program Memory Size
16KB (16K x 8)
Package / Case
28-VQFN Exposed Pad, 28-HVQFN, 28-SQFN, 28-DHVQFN
Core Processor
8051
Core Size
8-Bit
Speed
25MHz
Connectivity
SMBus (2-Wire/I²C), SPI, UART/USART, USB
Peripherals
Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Number Of I /o
21
Ram Size
2.25K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 13x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Processor Series
C8051F3x
Core
8051
Data Bus Width
8 bit
Data Ram Size
2.25 KB
Interface Type
I2C/SMBus/SPI/UART/USB
Maximum Clock Frequency
25 MHz
Number Of Programmable I/os
21
Number Of Timers
4
Operating Supply Voltage
2.7 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
PK51, CA51, A51, ULINK2
Development Tools By Supplier
C8051F320DK
Minimum Operating Temperature
- 40 C
On-chip Adc
13-ch x 10-bit or 17-ch x 10-bit
No. Of I/o's
21
Ram Memory Size
1280Byte
Cpu Speed
25MHz
No. Of Timers
4
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
336-1480 - DAUGHTER CARD TOOLSTCK C8051F321770-1006 - ISP 4PORT FOR SILABS C8051F MCU336-1449 - ADAPTER PROGRAM TOOLSTICK F321336-1260 - DEV KIT FOR C8051F320/F321
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1261

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11.4.2. 16.4.2 PSWE Maintenance
11.4.3. System Clock
7. Reduce the number of places in code where the PSWE bit (b0 in PSCTL) is set to a '1'. There
8. Minimize the number of variable accesses while PSWE is set to a '1'. Handle pointer address
9. Disable interrupts prior to setting PSWE to a '1' and leave them disabled until after PSWE has
10. Make certain that the Flash write and erase pointer variables are not located in XRAM. See
11. Add address bounds checking to the routines that write or erase Flash memory to ensure that
12. If operating from an external crystal, be advised that crystal performance is susceptible to
13. If operating from the external oscillator, switch to the internal oscillator during Flash write or
should be exactly one routine in code that sets PSWE to a '1' to write Flash bytes and one rou-
tine in code that sets both PSWE and PSEE both to a '1' to erase Flash pages.
updates and loop maintenance outside the "PSWE = 1; ... PSWE = 0;" area. Code examples
showing this can be found in AN201, "Writing to Flash from Firmware", available from the Sili-
con Laboratories web site.
been reset to '0'. Any interrupts posted during the Flash write or erase operation will be ser-
viced in priority order after the Flash operation has been completed and interrupts have been
re-enabled by software.
your compiler documentation for instructions regarding how to explicitly locate variables in dif-
ferent memory areas.
a routine called with an illegal address does not result in modification of the Flash.
electrical interference and is sensitive to layout and to changes in temperature. If the system is
operating in an electrically noisy environment, use the internal oscillator or use an external
CMOS clock.
erase operations. The external oscillator can continue to run, and the CPU can switch back to
the external oscillator after the Flash operation has completed.
Rev. 1.4
C8051F320/1
111

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