C8051F326-TB Silicon Laboratories Inc, C8051F326-TB Datasheet - Page 64

• Manufacturer Part Number: C8051F326-TB
• Description: BOARD PROTOTYPING W/C8051F326
• Manufacturer: Silicon Laboratories Inc
• Type: MCUr

Specifications of C8051F326-TB

• Contents: Board
• Processor To Be Evaluated: C8051F326/F327
• Interface Type: USB
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• For Use With/related Products: C8051F326
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

C8051F326/7
8.1.3. Flash Write Procedure
Flash bytes are programmed by software with the following sequence:
Steps 3-8 must be repeated for each byte to be written. After Flash writes are complete, PSWE should be
cleared so that MOVX instructions do not target program memory.
Table 8.1. Flash Electrical Characteristics
64
*Note: 512 bytes at location 0x3E00 to 0x3FFF are reserved.
Erase Cycle Time
Write Cycle Time
Parameter
Endurance
Flash Size
Step 1. Disable interrupts (recommended).
Step 2. Erase the 512-byte Flash page containing the target location, as described in
Step 3. Write the first key code to FLKEY: 0xA5.
Step 4. Write the second key code to FLKEY: 0xF1.
Step 5. Set the PSWE bit (register PSCTL).
Step 6. Clear the PSEE bit (register PSCTL).
Step 7. Using the MOVX instruction, write a single data byte to the desired location within the 512-
Step 8. Clear the PSWE bit (register PSCTL).
Section “8.1.2. Flash Erase Procedure” on page 63.
byte sector.
25 MHz System Clock
25 MHz System Clock
C8051F326/7
Conditions
Rev. 1.1
16384*
Min
20k
10
40
100k
Typ
15
55
—
Max
20
70
—
—
Erase/Write
Units
bytes
ms
µs