MA240017 Microchip Technology, MA240017 Datasheet - Page 48

• Manufacturer Part Number: MA240017
• Description: MODULE PLUG-IN PIC24F16KA102 PIM
• Manufacturer: Microchip Technology
• Series: PIC®r

Specifications of MA240017

• Accessory Type: Plug-In Module (PIM) - PIC24F16KA102
• Product: Microcontroller Modules
• Data Bus Width: 16 bit
• Core Processor: PIC24F16KA102
• Operating Supply Voltage: 3 V to 3.6 V
• Development Tools By Supplier: Integrated Development Environment, Assembler, ANSI C Compiler
• Processor Series: PIC24F
• Silicon Manufacturer: Microchip
• Core Architecture: PIC
• Core Sub-architecture: PIC24
• Silicon Core Number: PIC24F
• Silicon Family Name: PIC24FxxKAxx
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With/related Products: Explorer 16 (DM240001 or DM240002)
• For Use With: DM240001 - BOARD DEMO PIC24/DSPIC33/PIC32
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

PIC24F16KA102 FAMILY
5.5.1
The user can program one row of Flash program
memory at a time by erasing the programmable row.
The general process is:
1.
2.
3.
EXAMPLE 5-1:
DS39927B-page 46
; Set up NVMCON for row erase operation
; Init pointer to row to be ERASED
Read
(32 instructions) and store in data RAM.
Update the program data in RAM with the
desired new data.
Erase a row (see Example 5-1):
a)
b)
c)
d)
e)
Set the NVMOP bits (NVMCON<5:0>) to
‘011000’ to configure for row erase. Set the
ERASE
(NVMCON<14>) bits.
Write the starting address of the block to be
erased into the TBLPAG and W registers.
Write 55h to NVMKEY.
Write AAh to NVMKEY.
Set the WR bit (NVMCON<15>). The erase
cycle begins and the CPU stalls for the
duration of the erase cycle. When the erase is
done, the WR bit is cleared automatically.
MOV
MOV
MOV
MOV
MOV
TBLWTL W0, [W0]
DISI
MOV
MOV
MOV
MOV
BSET
NOP
NOP
PROGRAMMING ALGORITHM FOR
FLASH PROGRAM MEMORY
a
row
#0x4058, W0
W0, NVMCON
#tblpage(PROG_ADDR), W0
W0, TBLPAG
#tbloffset(PROG_ADDR), W0
#5
#0x55, W0
W0, NVMKEY
#0xAA, W1
W1, NVMKEY
NVMCON, #WR
(NVMCON<6>)
ERASING A PROGRAM MEMORY ROW – ASSEMBLY LANGUAGE CODE
of
program
and
memory
WREN
Preliminary
;
; Initialize NVMCON
;
; Initialize PM Page Boundary SFR
; Initialize in-page EA[15:0] pointer
; Set base address of erase block
; Block all interrupts
; Write the 55 key
;
; Write the AA key
; Start the erase sequence
; Insert two NOPs after the erase
; command is asserted
for next 5 instructions
4.
5.
For protection against accidental operations, the write
initiate sequence for NVMKEY must be used to allow
any erase or program operation to proceed. After the
programming command has been executed, the user
must wait for the programming time until programming
is complete. The two instructions following the start of
the programming sequence should be NOPs, as
displayed in Example 5-5.
Write the first 32 instructions from data RAM into
the program memory buffers (see Example 5-1).
Write the program block to Flash memory:
a)
b)
c)
d)
Set the NVMOP bits to ‘011000’ to
configure for row programming. Clear the
ERASE bit and set the WREN bit.
Write 55h to NVMKEY.
Write AAh to NVMKEY.
Set the WR bit. The programming cycle
begins and the CPU stalls for the duration of
the write cycle. When the write to Flash
memory is done, the WR bit is cleared
automatically.
© 2009 Microchip Technology Inc.