MT8VDDT3264HY-335G3 Micron Technology Inc, MT8VDDT3264HY-335G3 Datasheet - Page 17

• Manufacturer Part Number: MT8VDDT3264HY-335G3
• Description: MODULE DDR SDRAM 256MB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT8VDDT3264HY-335G3

• Memory Type: DDR SDRAM
• Memory Size: 256MB
• Speed: 333MT/s
• Package / Case: 200-SODIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 200SODIMM
• Device Core Size: 64b
• Organization: 32Mx64
• Total Density: 256MByte
• Chip Density: 256Mb
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.4A
• Number Of Elements: 8
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 16:
DDR SDRAM Components only
pdf: 09005aef8092973f, source: 09005aef80921669
DD8C16_32_64x64HG.fm - Rev. B 9/04 EN
AC CHARACTERISTICS
PARAMETER
DQ-DQS hold, DQS to first DQ to go non-
valid, per access
Data hold skew factor
ACTIVE to PRECHARGE
command
ACTIVE to READ with Auto precharge
command
ACTIVE to ACTIVE/AUTO REFRESH command
period
AUTO REFRESH command period
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command
interval
Average periodic refresh interval 128MB
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
(Continued)
Electrical Characteristics and Recommended AC Operating Conditions
DD
128MB
256MB,
512MB
256MB,
512MB
SYMBOL
t
t
WPRES
t
t
t
t
t
t
t
WPRE
t
t
t
t
WPST
t
t
XSNR
XSRD
t
t
RPRE
REFC
RPST
t
WTR
t
QHS
RAP
RCD
RRD
REFI
VTD
RAS
t
t
RFC
QH
WR
na
RC
RP
t
t
MIN
0.25
t
QHS
200
HP -
0.9
0.4
0.4
QH -
42
15
60
72
15
15
12
15
75
0
1
0
17
-335
t
128MB, 256MB, 512MB (x64, SR)
DQSQ
70,000
MAX
140.6
0.55
70.3
15.6
1.1
0.6
0.6
7.8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
t
MIN
0.25
t
QHS
HP -
200
0.9
0.4
0.4
QH -
40
15
65
75
15
15
15
15
75
0
1
0
-262
t
DQSQ
120,000
200-PIN DDR SODIMM
MAX
140.6
0.75
70.3
15.6
1.1
0.6
0.6
7.8
t
MIN
t
0.25
t
QHS
200
HP -
0.9
0.4
0.4
QH -
40
20
65
75
20
20
15
15
75
-26A/-265
0
1
0
©2004 Micron Technology, Inc. All rights reserved.
t
DQSQ
120,000
MAX
140.6
0.75
70.3
15.6
1.1
0.6
0.6
7.8
UNITS NOTES
t
t
t
t
t
t
ns
ns
ns
ns
ns
ns
ns
ns
CK
CK
ns
CK
ns
CK
ns
CK
ns
µs
µs
µs
µs
ns
ns
CK
22, 23
31, 48
18, 19
43
38
38
17
22
21
21