MT8VDDT3264HY-335G3 Micron Technology Inc, MT8VDDT3264HY-335G3 Datasheet - Page 12

• Manufacturer Part Number: MT8VDDT3264HY-335G3
• Description: MODULE DDR SDRAM 256MB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT8VDDT3264HY-335G3

• Memory Type: DDR SDRAM
• Memory Size: 256MB
• Speed: 333MT/s
• Package / Case: 200-SODIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 200SODIMM
• Device Core Size: 64b
• Organization: 32Mx64
• Total Density: 256MByte
• Chip Density: 256Mb
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.4A
• Number Of Elements: 8
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute Maximum Ratings
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
Table 10: DC Electrical Characteristics and Operating Conditions
Notes: 1–5, 14; notes appear on pages 18–21; 0°C
Table 11: AC Input Operating Conditions
Notes: 1–5, 12, 48; notes appear on pages 18–21; 0°C
pdf: 09005aef8092973f, source: 09005aef80921669
DD8C16_32_64x64HG.fm - Rev. B 9/04 EN
PARAMETER/CONDITION
PARAMETER/CONDITION
Supply Voltage
I/O Supply Voltage
I/O Reference Voltage
I/O Termination Voltage (system)
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
INPUT LEAKAGE CURRENT Any input
0V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT
(DQ pins are disabled; 0V
OUTPUT LEVELSHigh Current (V
V
Low Current (V
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
I/O Reference Voltage
REF
Stresses greater than those listed may cause perma-
Voltage on V
Voltage on V
Voltage on V
, minimum V
Relative to V
Relative to V
Relative to V
V
IN
V
DD
, Vref pin 0V
OUT
REF
DD
DD
TT
)
SS
SS
SS
Q Supply
Supply
= 0.373V, maximum V
and Inputs
. . . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
V
OUT
V
IN
OUT
1.35V
V
= V
DD
DD
Q)
Q-0.373V, minimum
REF
Command/Address,
RAS#, CAS#, WE#,
CKE, S#
CK, CK#
DM
DQ, DQS
, maximum V
SYMBOL
V
V
V
T
REF
IH
IL
A
(
(
AC
(
AC
T
AC
+70°C
A
)
)
)
TT
)
+70°C; V
12
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
128MB, 256MB, 512MB (x64, SR)
SYMBOL
0.49
V
V
V
Voltage on I/O Pins
Operating Temperature,
Storage Temperature (plastic) . . . . . . -55°C to +150°C
Short Circuit Output Current. . . . . . . . . . . . . . . 50mA
V
REF
DD
V
V
IH
IL
V
I
I
DD
I
OH
REF
OZ
OL
DD
I
(
Relative to V
TT
(
MIN
I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T
DC
DC
= V
+ 0.310
Q
A
–
)
)
V
(ambient) . . . . . . . . . . . . . . . . . . . .. 0°C to +70°C
DD
DD
0.49 V
Q = +2.5V ±0.2V
Q
V
V
REF
REF
-16.8
MIN
16.8
-0.3
-16
2.3
2.3
-8
-2
-5
+ 0.15
- 0.04
0.51
200-PIN DDR SODIMM
V
SS
REF
DD
MAX
. . . . . . . . . . . . -0.5V to V
Q 0.51
- 0.310
–
V
DD
V
V
V
REF
REF
Q
DD
MAX
2.7
2.7
16
©2004 Micron Technology, Inc. All rights reserved.
+ 0.04
8
2
5
–
–
- 0.15
+ 0.3
V
DD
UNITS
Q
V
V
V
UNITS
mA
mA
µA
µA
V
V
V
V
V
V
NOTES
DD
25, 35
25, 35
32, 36, 39
NOTES
6
32, 36
33, 34
Q +0.5V
6, 39
7, 39
25
25
46
46