MT48H16M32LFCM-75:A TR Micron Technology Inc, MT48H16M32LFCM-75:A TR Datasheet - Page 70
MT48H16M32LFCM-75:A TR
Manufacturer Part Number
MT48H16M32LFCM-75:A TR
Description
IC SDRAM 512MBIT 133MHZ 90VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT48H16M32LFCM-75_ITA_TR.pdf
(73 pages)
Specifications of MT48H16M32LFCM-75:A TR
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
512M (16M x 32)
Speed
133MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1330-2
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Figure 53:
PDF: 09005aef81ca5de4/Source: 09005aef81ca5e03
MT48H32M16LF_1.fm - Rev. J 2/08 EN
COMMAND
BA0, BA1
ADDR
DQM
CLK
CKE
A10
DQ
t CKS
t CMS
WRITE – Continuous-Page Burst
t AS
t AS
t AS
ACTIVE
BANK
T0
ROW
ROW
Notes:
t CKH
t CMH
t AH
t AH
t AH
t RCD
t CL
1.
2. Page left open; no
T1
NOP
t
t CH
WR must be satisfied prior to PRECHARGE command.
t CMS
t CK
t DS
COLUMN m
D
T2
WRITE
BANK
IN
t CMH
m
t DH
t
RP.
t DS
D
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
IN
T3
NOP
m + 1
t DH
70
t DS
D
IN
T4
NOP
m + 2
All locations within same row
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Full page completed
t DS
D
IN
T5
NOP
m + 3
t DH
(
(
(
(
(
(
)
(
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(
)
(
)
(
)
(
)
)
)
)
)
(
)
(
(
)
(
(
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(
(
(
(
(
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(
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(
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(
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(
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(
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(
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)
)
)
)
(
(
(
)
(
)
(
)
)
)
)
t DS
Tn + 1
D
IN
NOP
m - 1
t DH
Full-page burst does
not self-terminate. Can
use BURST TERMINATE
command to stop.
©2005 Micron Technology, Inc. All rights reserved.
Timing Diagrams
BURST TERM
Tn + 2
DON’T CARE
1, 2
Tn + 3
NOP
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