MT48H16M32LFCM-75:A TR Micron Technology Inc, MT48H16M32LFCM-75:A TR Datasheet - Page 33

IC SDRAM 512MBIT 133MHZ 90VFBGA

MT48H16M32LFCM-75:A TR

Manufacturer Part Number
MT48H16M32LFCM-75:A TR
Description
IC SDRAM 512MBIT 133MHZ 90VFBGA
Manufacturer
Micron Technology Inc

Specifications of MT48H16M32LFCM-75:A TR

Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
512M (16M x 32)
Speed
133MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1330-2
Figure 23:
Figure 24:
PDF: 09005aef81ca5de4/Source: 09005aef81ca5e03
MT48H32M16LF_1.fm - Rev. J 2/08 EN
WRITE-to-PRECHARGE
Terminating a WRITE Burst
Notes:
COMMAND
COMMAND
1. DQM could remain LOW in this example if the WRITE burst is a fixed length of two.
COMMAND
t
t
WR@
WR@
ADDRESS
ADDRESS
ADDRESS
DQM
DQM
t
t
CLK
CK ≥ 15ns
CK < 15ns
DQ
DQ
CLK
DQ
BANK a,
BANK a,
WRITE
WRITE
COL n
COL n
BANK,
WRITE
COL n
D
D
T0
n
n
D
IN
IN
T0
n
IN
TERMINATE
n + 1
n + 1
NOP
NOP
BURST
T1
D
D
T1
IN
IN
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
t
WR
DON’T CARE
PRECHARGE
(a or all)
COMMAND
(ADDRESS)
33
BANK
NOP
(DATA)
T2
NEXT
T2
t
WR
PRECHARGE
(a or all)
BANK
T3
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t RP
NOP
NOP
T4
t RP
BANK a,
ACTIVE
ROW
NOP
T5
DON’T CARE
BANK a,
ACTIVE
©2005 Micron Technology, Inc. All rights reserved.
ROW
NOP
T6
Operations

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