MT48H16M32LFCM-75:A TR Micron Technology Inc, MT48H16M32LFCM-75:A TR Datasheet - Page 68

• Manufacturer Part Number: MT48H16M32LFCM-75:A TR
• Description: IC SDRAM 512MBIT 133MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H16M32LFCM-75:A TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 512M (16M x 32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1330-2

Figure 51:
PDF: 09005aef81ca5de4/Source: 09005aef81ca5e03
MT48H32M16LF_1.fm - Rev. J 2/08 EN
COMMAND
BA0, BA1
ADDR
DQM
CKE
CLK
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
T0
ROW
ROW
BANK
Single WRITE – With Auto Precharge
t CMH
t AH
t AH
t AH
t CKH
t RCD
t RAS
t RC
Notes:
t CK
T1
NOP
1. For this example, BL = 1, and the WRITE burst is followed by a manual PRECHARGE.
2. There must be one
t CL
T2
NOP
t CH
T3
NOP
ENABLE AUTO PRECHARGE
t
CK during the
t CMS
COLUMN m
t DS
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
BANK
WRITE
T4
D
IN
t CMH
m
t DH
68
t WR
t
WR time for WRITE auto precharge.
T5
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T6
NOP
T7
NOP
t RP
©2005 Micron Technology, Inc. All rights reserved.
ROW
BANK
ROW
Timing Diagrams
T8
ACTIVE
T9
NOP
DON’T CARE