MT48H8M32LFB5-75:H Micron Technology Inc, MT48H8M32LFB5-75:H Datasheet - Page 76

• Manufacturer Part Number: MT48H8M32LFB5-75:H
• Description: IC SDRAM 256MBIT 133MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M32LFB5-75:H

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. E, Production. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 03/07
Rev. D, Production . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 02/07
Rev. C, Production . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 09/06
Rev. B, Production . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 09/06
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
256mb_x16_sdram_y36m_1.fm - Rev G 6/09 EN
• Moved Figure 25 to page 34.
• Removed the “In order to exit deep power down...” paragraph on page 35.
• Replaced text in note 9 and removed “Deep power down” rows in Table 7 on page 41.
• Added note 9 to
• Changed tXSR from “67.5” to “80” in Table 11 on page 46.
• Changed “9” to “8” for
• Replaced note 30 and 31 in the “Notes” section on page 52.
• Moved Figure 34 to page 54.
• Removed note 1 from Figure 38 on page 58.
• Changed ball D7 from “V
• Removed CL = 1 from Table 2 on page 1, Figure 6 on page 14, Figure 7 on page 16,
• Added a “For burst length of 16 or continuous page burst, contact factory for avail-
• Changed “Burst Length = 1” in the I
• Changed all instances of “HDQM” with “UDQM.”
• Changed all instances of “DQM0-3” to “DQM” in Figure 36 through Figure 52.
• Removed all instances of continuous page burst after page 1.
• Added changed burst length “16” and “continuous” to “Reserved” in Figure 6.
• Removed note specifying “E14 and E13 (BA1 and BA0) must be “1, 0” to select the
• Changed the following sentence in the “Extended Mode Register (EMR)” on page 16:
• Removed the following note from Figure 53 and Figure 54: “Green packaging compo-
• Added Note 1 to Figure 8, page 17.
• Updated Table 15 values, page 50.
• Removed all instances of -10 speed grade.
• Changed CL = 2 from 104 MHz to 100 MHz.
• Changed “Refresh count” for 8 Meg x 32 to 8K from 4K in Table 1.
• Added “E2” row to Table 3.
• Removed the following from sentence two in the “General Description” section: “This
• Removed all instances of “full” page burst and replaced them with “continuous” page
• Added the following note to the “Features” section on page 1: “Contact factory for
• Added a “Power” section to “Options” on page 1.
• Replaced old part numbering table with Figure 1.
• Changed the clock rate on -75 and -8 for CL = 2 from 111 to 100 in Table 2.
page 46.
Figure 12 on page 25, Figure 13 on page 26, Figure 16 on page 28, Figure 17 on
page 29, Table 11 on page 46, Table 12 on page 47.
ability” in Features section on page 1.
extended mode register (vs. the standard mode register) from Figure 8.
“The low-power EMR must be loaded when all banks are idle and no burst are in
progress.”
sition is available upon request.”
architecture is compatible with the 2n rule of prefetch architecture.”
burst.
availability.”
t
AC and note 27 to
t
AC (2) -75, and
DD
76
Q” to “V
t
DD
OH
SS
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Q” in Figure 4 on page 8.
1 row in Table 13 and Table 14.
t
N
CK (2) -75 from “10” to “9” in Table 11 on
in Table 11 on page 46.
256Mb: x16, x32 Mobile SDRAM
©2006 Micron Technology, Inc. All rights reserved.
Revision History