MT48H8M32LFB5-75:H Micron Technology Inc, MT48H8M32LFB5-75:H Datasheet - Page 49

• Manufacturer Part Number: MT48H8M32LFB5-75:H
• Description: IC SDRAM 256MBIT 133MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M32LFB5-75:H

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 14:
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
256mb_x16_sdram_y36m_1.fm - Rev G 6/09 EN
Parameter/Condition
Operating current:
Active mode; BL = 1; READ or WRITE;
Standby current:
Power-down mode; All banks idle; CKE = LOW
Precharge nonpower-down standby current with clock stopped: All
banks idle; CKE is LOW, CS is HIGH; CK = LOW, CK# = HIGH; Address and
control inputs are switching; Data bus inputs are stable
Standby current:
Non-power-down mode; All banks idle; CKE = HIGH
Precharge nonpower-down standby current with clock stopped: All
banks idle; CKE is LOW, CS is HIGH; CK = LOW, CK# = HIGH; Address and
control inputs are switching; Data bus inputs are stable
Standby current:
Active mode; CKE = LOW; CS# = HIGH; All banks active; No accesses in
progress
Precharge nonpower-down standby current with clock stopped: All
banks idle; CKE is LOW, CS is HIGH; CK = LOW, CK# = HIGH; Address and
control inputs are switching; Data bus inputs are stable
Standby current:
Active mode; CKE = HIGH; CS# = HIGH; All banks active after
No accesses in progress
Precharge nonpower-down standby current with clock stopped: All
banks idle; CKE is LOW, CS is HIGH; CK = LOW, CK# = HIGH; Address and
control inputs are switching; Data bus inputs are stable
Operating current:
Burst mode; READ or WRITE; All banks active, half DQs toggling every
cycle
Auto refresh current:
CKE = HIGH; CS# = HIGH
Deep power-down
I
Notes: 1, 5, 6, 11, 13; notes appear on page 52 and 53; V
DD
Specifications and Conditions (x32)
t
RC =
t
RC (MIN)
t
t
RFC =
RFC = 7.8125µs
49
t
RFC (MIN)
t
RCD met;
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
/V
DDQ
standard
standard
Symbol
power
power
I
I
I
I
I
I
I
I
I
DD2NS
I
DD3NS
DD2PS
DD2PS
DD3PS
low-
low-
I
DD2N
DD3N
I
I
I
DD2P
DD2P
DD3P
256Mb: x16, x32 Mobile SDRAM
DD1
DD4
DD5
DD6
I
= 1.7–1.95V
ZZ
300
220
300
220
120
100
-75
95
20
25
10
10
Electrical Specifications
5
5
3
5
Max
©2006 Micron Technology, Inc. All rights reserved.
300
220
300
220
115
90
20
25
10
95
10
-8
5
5
3
5
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
Notes
18, 26
19, 27
29, 30
1, 18,
1, 12,
1, 12,
1, 18,
1, 12,
19
30
30
30
30
19
19
19