lh28f016sc-l Sharp Microelectronics of the Americas, lh28f016sc-l Datasheet - Page 7

• Manufacturer Part Number: lh28f016sc-l
• Description: M-bit Smartvoltage Flash Memories
• Manufacturer: Sharp Microelectronics of the Americas

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2 PRINCIPLES OF OPERATION
The LH28F016SC-L/SCH-L SmartVoltage flash
memories include an on-chip WSM to manage
block erase, byte write, and lock-bit configuration
functions. It allows for : 100% TTL-level control
inputs, fixed power supplies during block erasure,
byte write, and lock-bit configuration, and minimal
processor overhead with RAM-like interface timings.
After initial device power-up or return from deep
power-down mode (see Table 2 "Bus Operations"),
the device defaults to read array mode. Manipulation
of external memory control pins allow array read,
standby, and output disable operations.
Status register and identifier codes can be
accessed through the CUI independent of the V
voltage. High voltage on V
block
configuration. All functions associated with altering
memory contents—block erase, byte write, lock-bit
configuration, status, and identifier codes—are
accessed via the CUI and verified through the
status register.
Commands are written using standard micro-
processor write timings. The CUI contents serve as
input to the WSM, which controls the block erase,
byte write, and lock-bit configuration. The internal
algorithms are regulated by the WSM, including
pulse repetition, internal verification, and margining
of data. Addresses and data are internally latched
during write cycles. Writing the appropriate
command outputs array data, accesses the
identifier codes, or outputs status register data.
Interface software that initiates and polls progress
of block erase, byte write, and lock-bit configuration
can be stored in any block. This code is copied to
and executed from system RAM during flash
memory updates. After successful completion,
reads are again possible via the Read Array
command. Block erase suspend allows system
erasure,
byte
LH28F016SC-L/SCH-L
writing,
PP
enables successful
and
lock-bit
PP