lh28f016sc-l Sharp Microelectronics of the Americas, lh28f016sc-l Datasheet - Page 36

• Manufacturer Part Number: lh28f016sc-l
• Description: M-bit Smartvoltage Flash Memories
• Manufacturer: Sharp Microelectronics of the Americas

6.2.6 ALTERNATIVE CE#-CONTROLLED WRITES
NOTES :
1. In systems where CE# defines the write pulse width
2. Sampled, not 100% tested.
SYMBOL
SYMBOL
• V
• V
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHEL
WLEL
ELEH
AVEH
DVEH
EHDX
EHAX
EHWH
EHEL
EHGL
AVAV
PHEL
WLEL
ELEH
PHHEH
VPEH
AVEH
DVEH
EHDX
EHAX
EHWH
EHEL
EHRL
EHGL
QVVL
QVPH
CC
CC
(within a longer WE# timing waveform), all setup, hold,
and inactive WE# times should be measured relative to
the CE# waveform.
= 2.7 to 3.6 V, T
= 3.3±0.3 V, T
Write Cycle Time
RP# High Recovery to CE# Going Low
WE# Setup to CE# Going Low
CE# Pulse Width
Address Setup to CE# Going High
Data Setup to CE# Going High
Data Hold from CE# High
Address Hold from CE# High
WE# Hold from CE# High
CE# Pulse Width High
Write Recovery before Read
Write Cycle Time
RP# High Recovery to CE# Going Low
WE# Setup to CE# Going Low
CE# Pulse Width
RP# V
V
Address Setup to CE# Going High
Data Setup to CE# Going High
Data Hold from CE# High
Address Hold from CE# High
WE# Hold from CE# High
CE# Pulse Width High
CE# High to RY/BY# Going Low
Write Recovery before Read
V
RP# V
PP
PP
Setup to CE# Going High
Hold from Valid SRD, RY/BY# High
HH
HH
Setup to CE# Going High
Hold from Valid SRD, RY/BY# High
A
= 0 to +70˚C or –40 to +85
A
= 0 to +70˚C or –40 to +85
PARAMETER
PARAMETER
VERSIONS
VERSIONS
˚
C
˚
C
- 36 -
NOTE
NOTE
2, 4
2, 4
2
3
3
2
2
2
3
3
3. Refer to Table 3 for valid A
4. V
(NOTE 1)
byte write, or lock-bit configuration.
should be held at V
byte write, or lock-bit configuration success (SR.1/3/4/5 = 0).
LH28F016SCH-L95
LH28F016SCH-L95
PP
LH28F016SC-L95
LH28F016SC-L95
MIN.
MIN.
150
120
100
100
70
50
50
25
70
50
50
25
1
0
5
5
0
should be held at V
0
1
0
5
5
0
0
0
0
MAX.
MAX.
100
HH
) until determination of block erase,
PPH1/2/3
LH28F016SC-L/SCH-L
LH28F016SCH-L12 UNIT
LH28F016SCH-L12 UNIT
LH28F016SC-L12
LH28F016SC-L12
MIN.
MIN.
170
IN
150
100
100
70
50
50
25
70
50
50
25
1
0
5
5
0
0
1
0
5
5
0
0
0
0
and D
(and if necessary RP#
IN
for block erase,
MAX.
MAX.
100
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns