NESG3033M14 Renesas Electronics Corporation., NESG3033M14 Datasheet - Page 7

• Manufacturer Part Number: NESG3033M14
• Description: Npn Silicon Germanium Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

Remark The graphs indicate nominal characteristics.
30
25
20
15
10
30
25
20
15
10
25
20
15
10
–5
5
0
5
0
5
0
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
1
1
1
V
f = 2 GHz
V
f = 5 GHz
V
f = 0.5 GHz
CE
CE
INSERTION POWER GAIN, MSG
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
CE
= 1 V
= 1 V
= 1 V
Collector Current I
Collector Current I
Collector Current I
MSG
MSG
|S
|S
MAG
21e
|S
21e
21e
|
10
10
|
10
2
2
|
2
MAG
C
C
C
(mA)
(mA)
(mA)
Data Sheet PU10640EJ02V0DS
100
100
100
30
25
20
15
10
30
25
20
15
10
30
25
20
15
10
5
0
5
0
5
0
INSERTION POWER GAIN, MAG, MSG
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
1
1
1
V
f = 1 GHz
V
f = 3 GHz
V
f = 0.5 GHz
CE
CE
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
CE
= 1 V
= 1 V
= 2 V
Collector Current I
Collector Current I
Collector Current I
MSG
MSG
|S
21e
10
10
10
|
2
MAG
MSG
|S
|S
NESG3033M14
21e
21e
|
|
2
2
C
C
C
(mA)
(mA)
(mA)
MAG
100
100
100
7