NESG3033M14 Renesas Electronics Corporation., NESG3033M14 Datasheet - Page 4

• Manufacturer Part Number: NESG3033M14
• Description: Npn Silicon Germanium Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

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TYPICAL CHARACTERISTICS (T
4
0.0001
0.0001
Remark The graphs indicate nominal characteristics.
0.001
0.001
0.01
0.01
250
200
150
100
100
100
0.1
0.1
50
10
10
0
1
1
0.4
0.4
V
V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
CE
CE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
0.5
0.5
25
= 1 V
= 3 V
Base to Emitter Voltage V
Base to Emitter Voltage V
Ambient Temperature T
0.6
0.6
50
Mounted on Glass Epoxy PCB
(1.08 cm
0.7
0.7
75
2
× 1.0 mm (t) )
100
0.8
0.8
A
A
BE
BE
(˚C)
= +25°C, unless otherwise specified)
(V)
(V)
125
0.9
0.9
Data Sheet PU10640EJ02V0DS
150
1.0
1.0
0.0001
0.001
0.01
100
0.1
0.3
0.2
0.1
10
40
35
30
25
20
15
10
0
1
5
0
0.4
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
CE
0.5
Collector to Emitter Voltage V
= 2 V
Base to Emitter Voltage V
Collector to Base Voltage V
1
1
0.6
2
2
200 A
0.7
μ
NESG3033M14
3
3
0.8
BE
f = 1 MHz
CB
(V)
I
CE
4
4
B
0.9
(V)
= 20 A
(V)
180 A
160 A
140 A
120 A
100 A
40 A
80 A
60 A
μ
μ
μ
μ
μ
μ
μ
μ
μ
1.0
5
5