NESG3033M14 Renesas Electronics Corporation., NESG3033M14 Datasheet - Page 10

• Manufacturer Part Number: NESG3033M14
• Description: Npn Silicon Germanium Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

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S-PARAMETERS
microwave circuit simulator without keyboard input.
10
Remark The graphs indicate nominal characteristics.
Measuring method : Measured at power matched with external sleeve tuner. (The load resistance is not inserted
S-parameters/Noise parameters are provided on our web site in a form (S2P) that enables direct import to a
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.ncsd.necel.com/microwave/index.html
20
15
10
–5
4
3
2
1
0
5
0
–20
1
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
V
I
cq
CE
= 20 mA (RF OFF)
= 3 V, f = 2 GHz
–15
Collector Current I
Input Power P
–10
between the base DC power supply and Bias Tee.)
P
G
out
10
a
I
C
NF
in
–5
(dBm)
C
(mA)
V
f = 2 GHz
0
CE
= 2 V
Data Sheet PU10640EJ02V0DS
100
5
20
15
10
5
0
50
40
30
20
10
0
NESG3033M14