NESG3033M14 Renesas Electronics Corporation., NESG3033M14 Datasheet - Page 6

• Manufacturer Part Number: NESG3033M14
• Description: Npn Silicon Germanium Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

6
Remark The graphs indicate nominal characteristics.
30
25
20
15
10
30
25
20
15
10
40
35
30
25
20
15
10
5
0
5
0
5
0
0.1
1
1
V
f = 2 GHz
V
f = 2 GHz
CE
CE
GAIN BANDWIDTH PRODUCT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
= 1 V
= 3 V
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Collector Current I
Collector Current I
MSG
|S
Frequency f (GHz)
1
21e
|
2
10
10
MAG
MAG
C
C
10
(mA)
(mA)
MSG
V
I
C
CE
= 15 mA
Data Sheet PU10640EJ02V0DS
= 2 V
100
100
100
30
25
20
15
10
40
35
30
25
20
15
10
40
35
30
25
20
15
10
5
0
5
0
5
0
0.1
0.1
1
V
f = 2 GHz
CE
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
= 2 V
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Collector Current I
MSG
|S
MSG
Frequency f (GHz)
Frequency f (GHz)
21e
|S
1
1
21e
|
2
|
2
MAG
10
MAG
MAG
NESG3033M14
MAG
C
10
10
(mA)
MSG
MSG
V
I
V
I
C
C
CE
CE
= 15 mA
= 15 mA
= 1 V
= 3 V
100
100
100