NESG3033M14 Renesas Electronics Corporation., NESG3033M14 Datasheet - Page 13

• Manufacturer Part Number: NESG3033M14
• Description: Npn Silicon Germanium Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

<R>
EXAMPLE OF CHARACTERISTICS FOR 1.575 GHz LNA EVALUATION BOARD
ELECTRICAL CHARACTERISTICS (T
TYPICAL CHARACTERISTICS (T
Noise Figure
Gain
Input Return Loss
Output Return Loss
Gain 1 dB Compression Output Power
Note A current increase is seen because the ESD protection element is turned on.
Remark The graph indicates nominal characteristics.
–10
15
10
–5
5
0
–25
However, there is no influence of deterioration etc. on reliability.
V
I
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
cq
CC
= 6 mA (RF OFF)
–20
Parameter
= 3 V, f = 1.575 GHz
Input Power P
–15
P
out
–10
I
C
in
(dBm)
–5
Symbol
P
Note
RL
RL
O (1 dB)
NF
G
A
a
out
in
= +25°C, unless otherwise specified)
0
A
Data Sheet PU10640EJ02V0DS
= +25°C, V
Value
0.65
17.4
10.1
14.4
0.7
5
25
20
15
10
5
0
dBm
Unit
dB
dB
dB
dB
CC
= 3 V, I
C
= 6.1 mA, f = 1.575 GHz)
NESG3033M14
13