NESG3033M14 Renesas Electronics Corporation., NESG3033M14 Datasheet

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NESG3033M14

Manufacturer Part Number
NESG3033M14
Description
Npn Silicon Germanium Rf Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NESG3033M14-T3-A
Manufacturer:
RENESAS
Quantity:
12 000
Document No. PU10640EJ02V0DS (2nd edition)
Date Published May 2007 NS
Printed in Japan
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
• Maximum stable power gain: MSG = 20.5 dB TYP. @ V
• SiGe HBT technology (UHS3) adopted: f
• This product is improvement of ESD of NESG3032M14.
• 4-pin lead-less minimold (M14, 1208 PKG)
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
NESG3033M14
NESG3033M14-T3 NESG3033M14-T3-A
Collector to Base Voltage
Collector to Emitter Voltage
Base Current
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
Remark To order evaluation samples, contact your nearby sales office.
Notes 1. V
NF = 0.6 dB TYP. @ V
Part Number
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
your nearby sales office.
2. Mounted on 1.08 cm
Unit sample quantity is 50 pcs.
Parameter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
CBO
and I
NESG3033M14-A
Order Number
B
4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)
are limited by the permissible current of the protection element.
CE
LOW NOISE, HIGH-GAIN AMPLIFICATION
= 2 V, I
2
NPN SiGe RF TRANSISTOR FOR
× 1.0 mm (t) glass epoxy PWB
C
V
Symbol
P
NPN SILICON GERMANIUM RF TRANSISTOR
= 6 mA, f = 2.0 GHz
I
CBO
V
B
tot
T
CEO
Note 1
I
T
C
stg
The mark <R> shows major revised points.
Note 2
4-pin lead-less minimold
(M14, 1208 PKG)
(Pb-Free)
j
Note 1
A
max
= +25°C)
= 110 GHz
DATA SHEET
Package
Note
−65 to +150
Ratings
150
150
5.0
4.3
12
35
CE
= 2 V, I
50 pcs
(Non reel)
10 kpcs/reel
Quantity
C
= 15 mA, f = 2.0 GHz
NESG3033M14
Unit
mW
mA
mA
°C
°C
V
V
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 4 (Emitter) face the
perforation side of the tape
Supplying Form
2006, 2007

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NESG3033M14 Summary of contents

Page 1

... ORDERING INFORMATION Part Number Order Number NESG3033M14 NESG3033M14-A NESG3033M14-T3 NESG3033M14-T3-A Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 50 pcs. ...

Page 2

... Remark When the voltage return bias circuit like the figure below is used, a current increase is seen because the ESD protection element is turned on when recommended range of motion in the above table is exceeded. However, there is no influence of reliability, including deterioration +25°C) A MIN. TYP. MAX. Unit − − 0 dBm in − − 100 kΩ Bias Choke Data Sheet PU10640EJ02V0DS NESG3033M14 ...

Page 3

... GHz Sopt L Lopt mA (set 2.0 GHz Sopt L Lopt μ s, Duty Cycle ≤ 2% Data Sheet PU10640EJ02V0DS NESG3033M14 MIN. TYP. MAX. Unit − − 100 nA − − 100 nA − 220 300 380 − 15.0 17.5 dB − 0.60 0.85 dB − ...

Page 4

... A 100 10 0.1 0.01 0.001 0.0001 0.8 0.9 1.0 ( 0.8 0.9 1.0 (V) BE Data Sheet PU10640EJ02V0DS NESG3033M14 REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE MHz Collector to Base Voltage V (V) CB COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 0.4 0.5 0.6 0.7 0.8 0.9 Base to Emitter Voltage V (V) BE COLLECTOR CURRENT vs. ...

Page 5

... C DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 100 10 0 Collector Current I (mA) C Remark The graphs indicate nominal characteristics. DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 100 10 100 0 100 Data Sheet PU10640EJ02V0DS NESG3033M14 100 Collector Current I (mA ...

Page 6

... MSG 100 0.1 Data Sheet PU10640EJ02V0DS NESG3033M14 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT = 100 Collector Current I (mA) C INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY MSG MAG MAG MSG ...

Page 7

... Collector Current I INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT 0.5 GHz 100 1 Collector Current I Data Sheet PU10640EJ02V0DS NESG3033M14 MSG MAG 21e 10 100 (mA) C MSG MAG 21e 10 100 (mA) C MSG 21e ...

Page 8

... INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT GHz 100 1 (mA) Data Sheet PU10640EJ02V0DS NESG3033M14 = 2 V MSG MAG 21e 10 100 Collector Current I (mA MAG 21e 10 100 Collector Current I (mA ...

Page 9

... Collector Current I (mA) C Remark The graphs indicate nominal characteristics. INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT GHz 25 MAG 100 100 Data Sheet PU10640EJ02V0DS NESG3033M14 MSG MAG 21e 10 100 Collector Current I (mA ...

Page 10

... S-parameters/Noise parameters are provided on our web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.ncsd.necel.com/microwave/index.html – (dBm GHz 0 100 (mA) C Data Sheet PU10640EJ02V0DS NESG3033M14 ...

Page 11

... EVALUATION CIRCUIT EXAMPLE (f = 1.575 GHz LNA) <R> Notes 1. 15 × 0.2 mm double sided copper clad glass epoxy PWB plated on pattern 3. : Through holes V GND Tr. (NESG3033M14) NESG3033M14 GPS_LNA Data Sheet PU10640EJ02V0DS NESG3033M14 ...

Page 12

... L = 0.5 mm Part Number Maker GRM1552C1H270JZ01 Murata GRM1552C1H6R0JZ01 Murata GRM155B11H102KA01 Murata AML1005H5N6STS FDK AML1005H3N9STS FDK MCR01MZPJ823 ROHM MCR01MZPJ5R1 ROHM MCR01MZPJ101 ROHM Data Sheet PU10640EJ02V0DS NESG3033M14 100 Ω R3 5.1 Ω 000 3 OUT 6 pF × 2 Value 000 pF 5 kΩ ...

Page 13

... Remark The graph indicates nominal characteristics. = +25° Symbol Value Unit 14.4 dB out P 0.7 dBm O (1 dB) = +25°C, unless otherwise specified Note – (dBm) in Data Sheet PU10640EJ02V0DS NESG3033M14 = 6.1 mA 1.575 GHz) 13 ...

Page 14

... Note A NC pin is Non-connection in the mold package (When NC-pin is open state, It will get an influences of floating capacitance. Therefore, we recommend connect to NC pin and Emitter pin). 14 1.0±0.05 +0.07 0.8 –0.05 PIN CONNECTIONS 1. Collector 2. Emitter 3. Base Note 4. NC (Connected with Pin 2) Data Sheet PU10640EJ02V0DS NESG3033M14 ...

Page 15

... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). NESG3033M14 Not all M8E 02. 11-1 ...

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