NESG3033M14 Renesas Electronics Corporation., NESG3033M14 Datasheet - Page 3

• Manufacturer Part Number: NESG3033M14
• Description: Npn Silicon Germanium Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
h
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Insertion Power Gain
Noise Figure
Associated Gain
Reverse Transfer Capacitance
Maximum Stable Power Gain
Gain 1 dB Compression Output Power
3rd Order Intermodulation Distortion
Output Intercept Point
FE
Notes 1. Pulse measurement: PW ≤ 350
h
Marking
CLASSIFICATION
FE
Rank
Value
2. Collector to base capacitance when the emitter grounded
3. MSG =
Parameter
220 to 380
S
S
21
12
FB
zL
MSG
Symbol
⏐S
h
P
C
OIP
FE
I
I
O (1 dB)
re
NF
G
CBO
EBO
21e
Note 1
Note 2
a
Note 3
3
⏐
2
μ
A
V
V
V
V
V
Z
V
Z
V
V
V
f = 2.0 GHz, Z
V
f = 2.0 GHz, Z
s, Duty Cycle ≤ 2%
Data Sheet PU10640EJ02V0DS
= +25°C)
S
S
CB
EB
CE
CE
CE
CE
CB
CE
CE
CE
= Z
= Z
= 5 V, I
= 1 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 3 V, I
= 3 V, I
Sopt
Sopt
, Z
, Z
E
C
C
C
C
C
E
C
C (set)
C (set)
Test Conditions
L
L
= 0 mA
= 0 mA
= 0 mA, f = 1 MHz
= 6 mA
= 15 mA, f = 2.0 GHz
= 6 mA, f = 2.0 GHz,
= 6 mA, f = 2.0 GHz,
= 15 mA, f = 2.0 GHz
= Z
= Z
S
S
= Z
= Z
= 20 mA,
= 20 mA,
Lopt
Lopt
Sopt
Sopt
, Z
, Z
L
L
= Z
= Z
Lopt
Lopt
MIN.
15.0
17.5
220
−
−
−
−
−
−
−
TYP.
17.5
0.60
17.5
0.15
20.5
12.5
24.0
300
−
−
NESG3033M14
MAX.
0.85
0.25
100
100
380
−
−
−
−
−
dBm
dBm
Unit
nA
nA
dB
dB
dB
dB
pF
−
3