LH28F400BVE-TL85 Sharp Electronics, LH28F400BVE-TL85 Datasheet - Page 4

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LH28F400BVE-TL85

Manufacturer Part Number
LH28F400BVE-TL85
Description
Manufacturer
Sharp Electronics
Datasheet

Specifications of LH28F400BVE-TL85

Cell Type
NOR
Density
4Mb
Interface Type
Parallel
Boot Type
Top
Address Bus
19/18Bit
Operating Supply Voltage (typ)
3.3/5V
Operating Temp Range
0C to 70C
Package Type
TSOP
Program/erase Volt (typ)
2.7/3.3/5/12V
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
2.7/4.5V
Operating Supply Voltage (max)
3.6/5.5V
Word Size
8/16Bit
Number Of Words
512K/256K
Supply Current
65mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LH28F400BVE-TL85
Manufacturer:
SHARP
Quantity:
20 000
SHARP’s LH28F400BVE-TL85 Flash memory with SmartVoltage technology is a high-density, low-cost, nonvolatile,
read/write storage solution for a wide range of applications. LH28F400BVE-TL85 can operate at V
Its low voltage operation capability realize battery life and suits for cellular phone application.
Its Boot, Parameter and Main-blocked architecture, flexible voltage and extended cycling provide for highly flexible
component suitable for portable terminals and personal computers. Its enhanced suspend capabilities provide for an ideal
solution for code + data storage applications. For secure code storage applications, such as networking, where code is either
directly executed out of flash or downloaded to DRAM, the LH28F400BVE-TL85 offers two levels of protection: absolute
protection with V
code security needs.
The LH28F400BVE-TL85 is manufactured on SHARP’s 0.35µm ETOX
package: the 48-lead TSOP ideal for board constrained applications.
*ETOX is a trademark of Intel Corporation.
SmartVoltage Technology
User-Configurable ×8 or ×16 Operation
High-Performance Access Time
Operating Temperature
Optimized Array Blocking Architecture
Extended Cycling Capability
Enhanced Automated Suspend Options
2.7V, 3.3V or 5V V
2.7V, 3.3V, 5V or 12V V
85ns(5V±0.25V), 90ns(5V±0.5V),
100ns(3.3V±0.3V), 120ns(2.7V-3.6V)
0°C to +70°C
Two 4K-word Boot Blocks
Six 4K-word Parameter Blocks
Seven 32K-word Main Blocks
Top Boot Location
100,000 Block Erase Cycles
Word/Byte Write Suspend to Read
Block Erase Suspend to Word/Byte Write
Block Erase Suspend to Read
PP
at GND, selective hardware boot block locking. These alternatives give designers ultimate control of their
4M-BIT (512Kbit × 8 / 256Kbit × 16)
CC
SmartVoltage Flash MEMORY
PP
LH28F400BVE-TL85
Automated Word/Byte Write and Block Erase
Enhanced Data Protection Features
Low Power Management
SRAM-Compatible Write Interface
Industry-Standard Packaging
ETOX
CMOS Process (P-type silicon substrate)
Not designed or rated as radiation hardened
TM*
Absolute Protection with V
Block Erase and Word/Byte Write Lockout
during Power Transitions
Boot Blocks Protection with WP#=V
Command User Interface
Status Register
Deep Power-Down Mode
Automatic Power Savings Mode Decreases
I
48-Lead TSOP
CC
process technology. It come in industry-standard
TM*
in Static Mode
Nonvolatile Flash Technology
CC
=2.7V and V
PP
=GND
Rev. 1.02
PP
IL
=2.7V.

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