LH28F400BVE-TL85 Sharp Electronics, LH28F400BVE-TL85 Datasheet - Page 4

• Manufacturer Part Number: LH28F400BVE-TL85
• Manufacturer: Sharp Electronics

Specifications of LH28F400BVE-TL85

• Cell Type: NOR
• Density: 4Mb
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 19/18Bit
• Operating Supply Voltage (typ): 3.3/5V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7/3.3/5/12V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7/4.5V
• Operating Supply Voltage (max): 3.6/5.5V
• Word Size: 8/16Bit
• Number Of Words: 512K/256K
• Supply Current: 65mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

SHARP’s LH28F400BVE-TL85 Flash memory with SmartVoltage technology is a high-density, low-cost, nonvolatile,
read/write storage solution for a wide range of applications. LH28F400BVE-TL85 can operate at V
Its low voltage operation capability realize battery life and suits for cellular phone application.
Its Boot, Parameter and Main-blocked architecture, flexible voltage and extended cycling provide for highly flexible
component suitable for portable terminals and personal computers. Its enhanced suspend capabilities provide for an ideal
solution for code + data storage applications. For secure code storage applications, such as networking, where code is either
directly executed out of flash or downloaded to DRAM, the LH28F400BVE-TL85 offers two levels of protection: absolute
protection with V
code security needs.
The LH28F400BVE-TL85 is manufactured on SHARP’s 0.35µm ETOX
package: the 48-lead TSOP ideal for board constrained applications.
*ETOX is a trademark of Intel Corporation.
SmartVoltage Technology
User-Configurable ×8 or ×16 Operation
High-Performance Access Time
Operating Temperature
Optimized Array Blocking Architecture
Extended Cycling Capability
Enhanced Automated Suspend Options
2.7V, 3.3V or 5V V
2.7V, 3.3V, 5V or 12V V
85ns(5V±0.25V), 90ns(5V±0.5V),
100ns(3.3V±0.3V), 120ns(2.7V-3.6V)
0°C to +70°C
Two 4K-word Boot Blocks
Six 4K-word Parameter Blocks
Seven 32K-word Main Blocks
Top Boot Location
100,000 Block Erase Cycles
Word/Byte Write Suspend to Read
Block Erase Suspend to Word/Byte Write
Block Erase Suspend to Read
PP
at GND, selective hardware boot block locking. These alternatives give designers ultimate control of their
4M-BIT (512Kbit × 8 / 256Kbit × 16)
CC
SmartVoltage Flash MEMORY
PP
LH28F400BVE-TL85
Automated Word/Byte Write and Block Erase
Enhanced Data Protection Features
Low Power Management
SRAM-Compatible Write Interface
Industry-Standard Packaging
ETOX
CMOS Process (P-type silicon substrate)
Not designed or rated as radiation hardened
TM*
Absolute Protection with V
Block Erase and Word/Byte Write Lockout
during Power Transitions
Boot Blocks Protection with WP#=V
Command User Interface
Status Register
Deep Power-Down Mode
Automatic Power Savings Mode Decreases
I
48-Lead TSOP
CC
process technology. It come in industry-standard
TM*
in Static Mode
Nonvolatile Flash Technology
CC
=2.7V and V
PP
=GND
Rev. 1.02
PP
IL
=2.7V.