LH28F400BVE-TL85 Sharp Electronics, LH28F400BVE-TL85 Datasheet - Page 12

• Manufacturer Part Number: LH28F400BVE-TL85
• Manufacturer: Sharp Electronics

Specifications of LH28F400BVE-TL85

• Cell Type: NOR
• Density: 4Mb
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 19/18Bit
• Operating Supply Voltage (typ): 3.3/5V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7/3.3/5/12V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7/4.5V
• Operating Supply Voltage (max): 3.6/5.5V
• Word Size: 8/16Bit
• Number Of Words: 512K/256K
• Supply Current: 65mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

NOTES:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10. WP# set to V
Read
Output Disable
Standby
Deep Power-Down
Read Identifier Codes
Write
Read
Output Disable
Standby
Deep Power-Down
Read Identifier Codes
Write
Refer to DC Characteristics. When V
X can be V
and V
RY/BY# is V
the WSM is not busy, in block erase suspend mode (with word/byte write inactive), word/byte write suspend mode or
deep power-down mode.
RP# at GND±0.2V ensures the lowest deep power-down current.
See Section 4.2 for read identifier code data.
Command writes involving block erase or word/byte write are reliably executed when V
V
attempted.
Refer to Table 4 for valid D
Never hold OE# low and WE# low at the same timing.
A
CC
-1
set to V
=V
PPH1/2/3
Mode
Mode
CC1/2/3/4
IL
IL
IL
OL
or V
or V
voltages.
or V
. Block erase or word/byte write with V
when the WSM is executing internal block erase or word/byte write algorithms. It is V
IH
IH
IH
in byte mode (BYTE#=V
for control pins and addresses, and V
.
Notes
Notes
6,7,8
6,7,8
4,10
4,10
8,9
10
10
8
8
8
IN
during a write operation.
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
RP#
V
V
V
V
V
V
IH
IH
IH
IH
IH
RP#
Table 3.1. Bus Operations(BYTE#=V
V
Table 3.2. Bus Operations(BYTE#=V
IH
IH
IH
IH
IH
HH
HH
HH
HH
HH
IL
PP
HH
HH
HH
HH
HH
IL
or
or
or
or
or
or
or
or
or
or
V
PPLK
CE#
V
V
V
V
V
X
IL
IL
IH
IL
IL
CE#
IL
V
V
V
V
V
, memory contents can be read, but not altered.
X
IH
).
IL
IL
IL
IL
OE#
V
V
V
V
X
X
IH
IH
IL
IL
OE#
V
V
V
V
X
X
IH
IH
IL
IL
PPLK
IH
WE#
<RP#<V
V
V
V
V
X
X
IH
IH
IH
IL
or V
WE#
V
V
V
V
X
X
IH
IH
IH
IL
PPH1/2/3
Figure 4
Address
HH
See
X
X
X
X
X
IH
IL
produce spurious results and should not be
Figure 4
Address
)
)
(1,2)
(1,2)
See
for V
X
X
X
X
X
V
PP
X
X
X
X
X
X
PP
. See DC Characteristics for V
V
X
X
X
X
X
X
High Z
High Z
High Z
Note 5
DQ
PP
D
D
OUT
IN
0-7
DQ
High Z
High Z
High Z
Note 5
D
DQ
High Z
High Z
High Z
High Z
High Z
D
OUT
IN
0-15
PP
X
8-15
=V
OH
PPH1/2/3
during when
RY/BY#
RY/BY#
Rev. 1.02
V
V
V
V
X
X
X
X
X
X
X
X
OH
OH
OH
OH
PPLK
and
(3)
(3)