LH28F400BVE-TL85 Sharp Electronics, LH28F400BVE-TL85 Datasheet - Page 27

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LH28F400BVE-TL85

Manufacturer Part Number
LH28F400BVE-TL85
Description
Manufacturer
Sharp Electronics
Datasheet

Specifications of LH28F400BVE-TL85

Cell Type
NOR
Density
4Mb
Interface Type
Parallel
Boot Type
Top
Address Bus
19/18Bit
Operating Supply Voltage (typ)
3.3/5V
Operating Temp Range
0C to 70C
Package Type
TSOP
Program/erase Volt (typ)
2.7/3.3/5/12V
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
2.7/4.5V
Operating Supply Voltage (max)
3.6/5.5V
Word Size
8/16Bit
Number Of Words
512K/256K
Supply Current
65mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LH28F400BVE-TL85
Manufacturer:
SHARP
Quantity:
20 000
NOTES:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10. BYTE# input level is V
V
V
V
V
V
V
V
V
V
V
V
Sym.
IL
IH
OL
OH1
OH2
PPLK
PPH1
PPH2
PPH3
LKO
HH
All currents are in RMS unless otherwise noted. Typical values at nominal V
I
device’s current draw is the sum of I
Includes RY/BY#.
Block erases and word/byte writes are inhibited when V
and V
V
Automatic Power Savings (APS) reduces typical I
operation.
CMOS inputs are either V
Sampled, not 100% tested.
Boot block erases and word/byte writes are inhibited when the corresponding RP#=V
word/byte write operations are not guaranteed with V
RP# connection to a V
GND±0.2V.
CCWS
PPH3
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
(TTL)
Output High Voltage
(CMOS)
V
Normal Operations
V
Word/Byte Write or Block
Erase Operations
V
Word/Byte Write or Block
Erase Operations
V
Word/Byte Write or Block
Erase Operations
V
RP# Unlock Voltage
(max.).
PPH1
PP
PP
PP
PP
CC
and I
Lockout Voltage during
Voltage during
Voltage during
Voltage during
Lockout Voltage
(min.), between V
CCES
Parameter
are specified with the device de-selected. If read or word/byte written while in erase suspend mode, the
HH
supply is allowed for a maximum cumulative period of 80 hours.
CC
CC
±0.2V or GND±0.2V. TTL inputs are either V
±0.2V in word mode or GND±0.2V in byte mode. WP# input level is V
PPH1
Notes
CCWS
(max.) and V
3,7
3,7
3,7
4,7
8,9
7
7
or I
DC Characteristics (Continued)
V
Min.
0.85
V
V
11.4
11.4
-0.5
-0.4
CCES
2.0
2.4
2.7
4.5
2.0
CC
CC
CC
=2.7V-3.6V
and I
CCR
PPH2
IH
Max.
<RP#<V
V
+0.5
12.6
12.6
0.8
0.4
1.5
3.6
5.5
PP
CCR
(min.), between V
to 1mA at 5V V
CC
V
or I
PPLK
HH
CCW
V
Min.
0.85
V
V
11.4
11.4
-0.5
-0.4
2.0
2.4
4.5
2.0
, and not guaranteed in the range between V
CC
CC
CC
and should not be attempted.
=5V±0.5V
, respectively.
CC
IL
Max.
V
+0.5
0.45
12.6
12.6
0.8
1.5
5.5
CC
CC
PPH2
or V
and 3mA at 2.7V and 3.3V V
voltage and T
IH
(max.) and V
.
Unit
V
V
V
V
V
V
V
V
V
V
V
V
IH
and WP#=V
V
I
I
I
V
I
I
I
V
I
V
I
Unavailable WP#
OL
OL
OL
OH
OH
OH
OH
OH
A
CC
CC
CC
CC
=+25°C.
=5.8mA(5V±0.5V)
=2.0mA(3.3V±0.3V)
=2.0mA(2.7V-3.6V)
=-2.5mA(5V±0.5V)
=-2.0mA(3.3V±0.3V)
=-1.5mA(2.7V-3.6V)
=-2.0mA
=-100µA
=V
=V
=V
=V
PPH3
Test Conditions
CC
CC
CC
CC
(min.), and above
IL
Min.
Min.
Min.
Min.
. Block erase and
CC
CC
PPLK
±0.2V or
Rev. 1.02
in static
(max.)

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