LH28F400BVE-TL85 Sharp Electronics, LH28F400BVE-TL85 Datasheet - Page 38

• Manufacturer Part Number: LH28F400BVE-TL85
• Manufacturer: Sharp Electronics

Specifications of LH28F400BVE-TL85

• Cell Type: NOR
• Density: 4Mb
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 19/18Bit
• Operating Supply Voltage (typ): 3.3/5V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7/3.3/5/12V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7/4.5V
• Operating Supply Voltage (max): 3.6/5.5V
• Word Size: 8/16Bit
• Number Of Words: 512K/256K
• Supply Current: 65mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

NOTES:
1. In systems where CE# defines the write pulse width (within a longer WE# timing waveform), all setup, hold, and inactive
2. Sampled, not 100% tested.
3. Refer to Table 4 for valid A
4. V
5. See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (High Seed
6. See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (Standard Configuration)
7. If BYTE# switch during reading cycle, exist the regulations separately.
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHEL
WLEL
ELEH
PHHEH
SHEH
VPEH
AVEH
DVEH
EHDX
EHAX
EHWH
EHEL
EHRL
EHGL
QVVL
QVPH
QVSL
FVEH
EHFV
Sym.
WE# times should be measured relative to the CE# waveform.
word/byte write success (SR.1/3/4/5=0).
Configuration) for testing characteristics.
for testing characteristics.
PP
should be held at V
Write Cycle Time
RP# High Recovery to CE# Going Low
WE# Setup to CE# Going Low
CE# Pulse Width
RP# V
WP# V
V
Address Setup to CE# Going High
Data Setup to CE# Going High
Data Hold from CE# High
Address Hold from CE# High
WE# Hold from CE# High
CE# Pulse Width High
CE# High to RY/BY# Going Low
Write Recovery before Read
V
RP# V
High
WP# V
High
BYTE# Setup to CE# Going High
BYTE# Hold from CE# High
PP
PP
Setup to CE# Going High
Hold from Valid SRD, RY/BY# High
HH
HH
IH
IH
Setup to CE# Going High
Hold from Valid SRD, RY/BY#
Setup to CE# Going High
Hold from Valid SRD, RY/BY#
Parameter
PPH1/2/3
IN
and D
(and if necessary RP# should be held at V
V
IN
CC
for block erase or word/byte write.
=5V±0.5V, 5V±0.25V, T
Notes
2,4
2,4
2,4
2
2
2
2
3
3
7
7
V
Min.
A
100
100
100
CC
85
50
40
40
25
40
85
1
0
0
5
0
0
0
0
0
=0°C to +70°C
=5V±0.25V
Max.
90
HH
(5)
) until determination of block erase or
Min.
V
100
100
100
90
50
40
40
25
40
90
1
0
0
5
0
0
0
0
0
CC
=5V±0.5V
Max.
90
(6)
Rev. 1.02
Unit
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns