IS43R32400D-5BL ISSI, Integrated Silicon Solution Inc, IS43R32400D-5BL Datasheet - Page 45

• Manufacturer Part Number: IS43R32400D-5BL
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: DDR SDRAMr

Specifications of IS43R32400D-5BL

• Organization: 4Mx32
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 700ps
• Maximum Clock Rate: 200MHz
• Operating Supply Voltage (typ): 2.6V
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.5V
• Supply Current: 185mA
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

IS43R32400D, IS43R16800D
WRITE
The WRITE command is used to initiate a burst write access to an active row, with a burst length as set in the Mode
Register. BA0 and BA1 select the bank, and the address inputs select the starting column location. The value of
A10 (or A8 for x32) determines whether or not Auto Precharge is used. If Auto Precharge is selected, the row being
accessed will be precharged at the end of the write burst; if Auto Precharge is not selected, the row will remain open
for subsequent accesses.
Basic Write timing parameters for DQs are shown in Figure Basic Write Timing Parameters; they apply to all Write
operations.
Input data appearing on the data bus, is written to the memory array subject to the DM input logic level appearing
coincident with the data. If a given DM signal is registered Low, the corresponding data will be written to the memory;
if the DM signal is registered High, the corresponding data inputs will be ignored, and a write will not be executed to
that byte / column location.
Integrated Silicon Solution, Inc.
Rev. 00D
06/22/09
Note:
All Command and Timing diagrams are for x16 option with AP = A10. For x32 option AP = A8.
WRITE command
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