MT28C3214P2NFL-11 TET Micron Technology Inc, MT28C3214P2NFL-11 TET Datasheet - Page 37

• Manufacturer Part Number: MT28C3214P2NFL-11 TET
• Manufacturer: Micron Technology Inc

Specifications of MT28C3214P2NFL-11 TET

• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Not Compliant

TIMING TEST CONDITIONS
SRAM READ CYCLE TIMING
SRAM WRITE CYCLE TIMING
2 Meg x 16 Page Flash 256K x 16 SRAM Combo Memory
MT28C3214P2FL_4.p65 – Rev. 4, Pub. 4/02
DESCRIPTION
Read cycle time
Address access time
Chip enable to valid output
Output enable to valid output
Byte select to valid output
Chip enable to Low-Z output
Output enable to Low-Z output
Byte select to Low-Z output
Chip enable to High-Z output
Output disable to High-Z output
Byte select disable to High-Z output
Output hold from address change
DESCRIPTION
Write cycle time
Chip enable to end of write
Address valid to end of write
Byte select to end of write
Address setup time
Write pulse width
Write recovery time
Write to High-Z output
Data to write time overlap
Data hold from write time
End write to Low-Z output
Input pulse levels .................... 0.1V V
Input rise and fall times .................................... 5ns
Input timing reference levels ......................... 0.5V
Output timing reference levels ..................... 0.5V
Operating Temperature ............... -40
CC
o
C to +85
to 0.9V V
t
LBHZ,
t
LBW,
t
SYMBOL
SYMBOL
LBZ,
t
LB,
o
t
CC
t
t
t
t
t
t
t
t
WHZ
C
t
t
t
t
t
OHZ
t
t
t
t
OLZ
t
AW
DW
OW
WC
CW
WP
WR
AA
OH
DH
CO
OE
RC
HZ
AS
LZ
t
t
t
t
UB
UBZ
UBHZ
UBW
37
256K x 16 SRAM COMBO MEMORY
V
V
CC
CC
MIN
MIN
50
50
0
0
0
0
0
0
5
0
0
0
0
0
= 1.65V–1.95V V
= 1.65V–1.95V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2 MEG x 16 PAGE FLASH
MAX
MAX
100
100
100
100
100
100
100
100
35
15
15
15
15
-10/-11
-10/-11
CC
CC
MIN
MIN
50
50
0
0
0
0
0
0
5
0
0
0
0
0
= 1.80V–2.20V
= 1.80V–2.20V
MAX
MAX
85
85
85
35
85
15
15
15
85
85
85
85
15
©2002, Micron Technology, Inc.
UNITS
UNITS
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