TS86101G2BCGL E2V, TS86101G2BCGL Datasheet - Page 36

• Manufacturer Part Number: TS86101G2BCGL
• Manufacturer: E2V

Specifications of TS86101G2BCGL

• Lead Free Status / RoHS Status: Not Compliant

11. Thermal and Moisture Characteristics
Figure 11-1. Simplified Thermal Model for CBGA 255 Package
Notes:
36
Assumptions:
square die 7.91 x 7.91 = 62.6 mm
60 μm thick Cyanate Ester/Ag glue,
0.85 mm ceramic thickness under die,
Sn63Pb37 balls diameter 0.70 mm,
0.65 mm height under bottom of LGA,
21 x 21 mm CLGA
1. Typical values, assuming that the power dissipation is uniform over 25% of the die’s top surface, are extracted from ANSYS
2. CBGA 255 package is hermetic.
0992D–BDC–04/09
thermal simulation.
(bottom half of thickness)
Cyanate Ester/Ag Glue
(top half of thickness)
Ceramic Package
Ceramic Package
Balls PbSn
Silicon Die
= 0.95 W/cm/˚C
= 0.17 W/cm/˚C
= 0.50 W/cm/˚C
= 0.17 W/cm/˚C
= 0.02 W/cm/˚C
62.6 mm
2
,
2
Silicon Junction
˚C/Watt
˚C/Watt
(bottom of balls
2.2
2.3
of 4 x 4 array
which are
under die)
at center
center of
package
Bottom
0.80˚C/Watt
0.8˚C/Watt
2.6
0.20˚C/Watt
˚C/Watt
(bottom of 48
balls around
"Around"
center of
package
footprint)
die
˚C/Watt
˚C/Watt
0.6
0.9
4.1
˚C/Watt
"Around"
center of
package
die footprint)
(bottom of
80 balls
around
Top of lid
0.4
2.8˚C/Watt
˚C/Watt
0.7
˚C/Watt
2.3 C/Watt
package
are peripheral)
Edge
balls which
of
(bottom of
111 other
0.3
˚C/Watt
˚C/Watt
0.4
Silicon Junction
2.3
2.2
0.20
0.80
0.8
2.6
0.6
0.9
Infinite heat sink
at bottom of balls
4.1
0.4
0.7
(result using SPICE, thermal to
Case where all bottoms of balls
are connected to infinite heat sink:
electrical equivalent model)
2.8
0.4
0.3
Reduction
e2v semiconductors SAS 2009
TS86101G2B
Infinite heat sink
at bottom of balls
Junction
Silicon
3.85˚C/Watt
®